Semiconductor device including gate and three conductor electrodes
First Claim
1. A semiconductor device comprising:
- a semiconductor layer;
a first conductor electrode, a second conductor electrode, and a third conductor electrode which are provided in contact with one surface of the semiconductor layer; and
a gate provided on the other surface side of the semiconductor layer,wherein the gate overlaps with at least part of a region between the first conductor electrode and the second conductor electrode, andwherein the gate does not overlap with a region between the second conductor electrode and the third conductor electrode.
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Accused Products
Abstract
An object is to provide a field effect transistor (FET) having a conductor-semiconductor junction, which has excellent characteristics, which can be manufactured through an easy process, or which enables high integration. Owing to the junction between a semiconductor layer and a conductor having a work function lower than the electron affinity of the semiconductor layer, a region into which carriers are injected from the conductor is formed in the semiconductor layer. Such a region is used as an offset region of the FET or a resistor of a semiconductor circuit such as an inverter. Further, in the case of setting up such an offset region and a resistor in one semiconductor layer, an integrated semiconductor device can be manufactured.
113 Citations
9 Claims
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1. A semiconductor device comprising:
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a semiconductor layer; a first conductor electrode, a second conductor electrode, and a third conductor electrode which are provided in contact with one surface of the semiconductor layer; and a gate provided on the other surface side of the semiconductor layer, wherein the gate overlaps with at least part of a region between the first conductor electrode and the second conductor electrode, and wherein the gate does not overlap with a region between the second conductor electrode and the third conductor electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification