Through-silicon via with air gap
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate;
a through via extending through the semiconductor substrate;
an air gap interposed between the through via and the semiconductor substrate; and
a dielectric layer overlying a backside of the semiconductor substrate and extending at least partially over the air gap.
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Abstract
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the liner, which is subsequently removed to form an air gap around the conductive material of the through-silicon via. A dielectric layer is formed of the backside of the semiconductor substrate to seal the air gap.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a through via extending through the semiconductor substrate; an air gap interposed between the through via and the semiconductor substrate; and a dielectric layer overlying a backside of the semiconductor substrate and extending at least partially over the air gap. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a substrate having a circuit side and a backside, the substrate having electrical circuitry formed on the circuit side; an opening extending from the circuit side to the backside; conductive material extending through the opening, the conductive material extending from the circuit side to the backside; a gap between the conductive material and sidewalls of the opening; and an isolation film overlying the backside of the substrate and abutting the conductive material such that the isolation film extends over the gap. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a substrate having a first side and a second side; a first dielectric layer over the first side of the substrate; a conductive material extending over at least a portion of the first dielectric layer and through an opening in the substrate, wherein the conductive material is spaced apart from sidewalls of the opening; and a second dielectric layer over the second side of the substrate, the second dielectric layer extending over the space between the substrate and the conductive material. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification