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Through-silicon via with air gap

  • US 8,436,448 B2
  • Filed: 02/16/2011
  • Issued: 05/07/2013
  • Est. Priority Date: 12/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a through via extending through the semiconductor substrate;

    an air gap interposed between the through via and the semiconductor substrate; and

    a dielectric layer overlying a backside of the semiconductor substrate and extending at least partially over the air gap.

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