High frequency solid state switching for impedance matching

• US 8,436,643 B2
• Filed: 11/03/2011
• Issued: 05/07/2013
• Est. Priority Date: 11/04/2010
• Status: Active Grant

• Current Assignee: AES Global Holdings Pte Ltd. (Advanced Energy Industries, Inc. (China))
• Original Assignee: Advanced Energy Industries Incorporated
• Inventors: Mason, Christopher C.
• Primary Examiner(s): TRAN, ANH Q
• Application Number:
  US13/288,712
• Publication Number:
  US 20120112815A1
• Time in Patent Office: 551 Days
• Field of Search: None
• US Class Current: 326/30
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H03H 7/40 Automatic matching of load impedance to source impedance
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 2242/26 Matching networks

Abstract

In accordance with this invention the above and other problems are solved by a switching apparatus and method that uses a switching circuit having a pair of parallel solid-state diodes (e.g., PN diodes), one of which is connected to a transistor (e.g., power MOSFET or IGBT), to switch a capacitor in or out of a variable capacitance element of an impedance matching network. Charging a body capacitance of the transistor reverse biases one of the two diodes so as to isolate the transistor from the RF signal enabling a low-cost high capacitance transistor to be used. Multiple such switching circuits and capacitors are connected in parallel to provide variable impedance for the purpose of impedance matching.

Claims

1. A circuit of a variable capacitance element of an impedance matching network comprising:

a capacitor coupled between a first voltage line and a first node;

a first diode having anode coupled to the first node and a cathode coupled to a second node;

a second diode having anode to couple to a second voltage line and a cathode to couple to the first node;

a transistor having a first, second, and control terminals, wherein;

the first terminal is coupled to the second node;

the second terminal is coupled to the second voltage line;

the control terminal is coupled to a controller; and

the capacitor is switched into the variable capacitance element when the transistor is on and switched out after the transistor is off.

2. The circuit of claim 1, wherein the transistor is a field effect transistor (FET) or a bipolar junction transistor (BJT).

3. The circuit of claim 2, wherein the transistor is an IGBT.

4. The circuit of claim 1, wherein the first and second diodes are PN diodes.

5. The circuit of claim 1, wherein, while the transistor is off, a body capacitance of the transistor is charged by current passing through the first diode until a voltage across the transistor reverse biases the first diode.

6. The circuit of claim 1, wherein, while the transistor is off, the first diode conducts until a voltage from the second node to the first node reverse biases the first diode as a result of charging of a body capacitance of the transistor.

7. The circuit of claim 6, wherein, while the transistor is off, the capacitor is substantially switched out of the variable capacitance element once the body capacitance of the transistor charges sufficiently to switch off the first diode.

8. The circuit of claim 7, wherein, while the transistor is off, the first diode switches off as a result of charge provided by the RF voltage signal on the first voltage line.

9. The circuit of claim 6, wherein the transistor is isolated from the RF signal on the first voltage line once the first diode switches off.

10. The circuit of claim 1, further comprising a first DC bias applied to the first node.

11. The circuit of claim 10, wherein, while the transistor is off, the first DC bias ensures that the first diode is forward biased while a body capacitance of the transistor is charged.

12. The circuit of claim 10, further comprising a diode that prevents the RF signal from reaching a source of the first DC bias.

13. The circuit of claim 10, wherein the first DC bias reduces distortion of the RF signal when the RF signal is at voltages equal to or below substantially twice a voltage drop of either of the first or second diodes.

14. The circuit of claim 1, further comprising a second DC bias applied to the second node while the transistor is off.

15. The circuit of claim 14, wherein the second DC bias holds the body capacitance of the transistor at a voltage sufficient to reverse bias the first diode while the transistor is off.

16. The circuit of claim 14, wherein the second DC bias reduces distortion of the RF signal caused by leakage current of the transistor.

17. The circuit of claim 14, wherein the second DC bias is also applied to raise a potential of the second node relative to the first node so as to reduce a time to switch off the first diode.

18. The circuit of claim 17, wherein the second DC bias decreases a switching time of the switching circuit.

19. The circuit of claim 1, wherein a body capacitance of the transistor is at least an order of magnitude larger than the capacitance of the capacitor.

20. A circuit of a variable capacitance element of an impedance matching network comprising:

a capacitor coupled between a first voltage line and a first node;

a first diode having anode coupled to the first node and a cathode coupled to a second node;

a low power DC bias source providing a first DC bias to the first node via a second diode;

a transistor having a first terminal, a second terminal, and a control terminal, wherein;

the first terminal is coupled to the second node;

the second terminal is coupled to a second voltage line;

the control terminal receives signals controlling switching of the transistor; and

the capacitor is switched into the variable capacitance element when the transistor is on and switched out after the transistor is off.

21. The circuit of claim 20, wherein, while the transistor is off, a body capacitance of the transistor is charged by current passing through the first diode until a voltage across the transistor reverse biases the first diode.

22. The circuit of claim 21, wherein, while the transistor is off and the first diode is switched off, the capacitor is substantially switched out of the variable capacitance element.

23. The circuit of claim 20, wherein the transistor is isolated from an RF signal on the first voltage line once the first diode switches off.

24. The circuit of claim 20, further comprising a second DC bias applied to the second node while the transistor is off.

25. The circuit of claim 20, wherein a body capacitance of the transistor is at least an order of magnitude larger than the capacitance of the capacitor.

26. The circuit of claim 20, further comprising a third diode having an anode coupled to the second voltage line and a cathode coupled to the first node.

27. A method of switching a capacitor in and out of a variable capacitance element of an impedance matching network, the method comprising:

turning a transistor of the variable capacitance element off;

charging a body capacitance of the transistor via a first diode using current from an RF signal passing through the capacitor;

reverse biasing the first diode with a voltage supplied by the body capacitance of the transistor after charging;

reducing the current from the RF signal through the capacitor to near zero amperes so as to reduce an impedance of the variable capacitance element;

turning the transistor of the variable capacitance element on;

discharging the body capacitance of the transistor;

forward biasing the first diode with current from the RF signal passing through the capacitor; and

increasing the current from the RF signal through the capacitor so as to increase the impedance of the variable capacitance element.