Semiconductor device and method for manufacturing the semiconductor device

• US 8,440,502 B2
• Filed: 09/09/2011
• Issued: 05/14/2013
• Est. Priority Date: 11/07/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akimoto, Kengo, Tsubuku, Masashi
• Primary Examiner(s): Booth, Richard A.
• Application Number:
  US13/228,486
• Publication Number:
  US 20110318916A1
• Time in Patent Office: 613 Days
• Field of Search: 438/104, 438151-166, 257/E21.561
• US Class Current: 438/104
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate insulating layer is formed over the gate electrode layer. A source electrode layer and a drain electrode layer are formed over the gate insulating layer. Surface treatment is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate. After the surface treatment is performed, an oxide semiconductor layer is formed over the gate insulating layer, the source electrode layer, and the drain electrode layer.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a conductive layer over the gate insulating layer;

forming an oxide semiconductor layer over the conductive layer; and

performing a plasma treatment on a surface of the oxide semiconductor layer, in a chamber into which oxygen is introduced,

wherein the oxide semiconductor layer is formed by a sputtering method in the chamber into which a mixture atmosphere of argon and oxygen is introduced.

2. The method for manufacturing a semiconductor device, according to claim 1, wherein the oxide semiconductor layer is formed by the sputtering method in which a target including indium, gallium, and zinc is used.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the plasma treatment and the formation of the oxide semiconductor layer are performed in the chamber in succession.

4. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a conductive layer over the gate insulating layer;

forming an oxide semiconductor layer over the conductive layer; and

performing a plasma treatment on a surface of the oxide semiconductor layer, in a chamber into which oxygen is introduced

wherein the oxide semiconductor layer is formed by a sputtering method at 20°

C. or higher.

5. The method for manufacturing a semiconductor device, according to claim 4, wherein the oxide semiconductor layer is formed by the sputtering method in which a target including indium, gallium, and zinc is used.

6. The method for manufacturing a semiconductor device according to claim 4, wherein the plasma treatment and the formation of the oxide semiconductor layer are performed in the chamber in succession.

7. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a conductive layer over the gate insulating layer;

forming a first oxide semiconductor layer over the conductive layer;

forming a first stack in which the conductive layer and the first oxide semiconductor layer are stacked and a second stack in which the conductive layer and the first oxide semiconductor layer are stacked by etching the conductive layer and the first oxide semiconductor layer;

performing a plasma treatment on surfaces of the gate insulating layer, the first stack, and the second stack which are formed over the substrate in a chamber into which an inert gas is introduced; and

forming a second oxide semiconductor layer over the gate insulating layer, the first stack, and the second stack after the plasma treatment is performed,

wherein the first and the second oxide semiconductor layers are formed by a sputtering method in the chamber into which a mixture atmosphere of argon and oxygen is introduced.

8. The method for manufacturing a semiconductor device, according to claim 7, wherein the first and the second oxide semiconductor layers are formed by the sputtering method in which a target including indium, gallium, and zinc is used.

9. The method for manufacturing a semiconductor device according to claim 7, wherein the plasma treatment and the formation of the second oxide semiconductor layer are performed in the chamber in succession.

10. The method for manufacturing a semiconductor device, according to claim 7, wherein an argon gas is used as the inert gas.

11. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a conductive layer over the gate insulating layer;

performing a first plasma treatment on a surface of the conductive layer;

forming a first oxide semiconductor layer over the conductive layer after the first plasma treatment is performed;

forming a first stack in which the conductive layer and the first oxide semiconductor layer are stacked and a second stack in which the conductive layer and the first oxide semiconductor layer are stacked by etching the conductive layer and the first oxide semiconductor layer;

performing a second plasma treatment on surfaces of the gate insulating layer, the first stack, and the second stack; and

forming a second oxide semiconductor layer over the gate insulating layer, the first stack, and the second stack after the second plasma treatment is performed,

wherein the first and the second oxide semiconductor layers are formed by a sputtering method in a chamber into which a mixture atmosphere of argon and oxygen is introduced.

12. The method for manufacturing a semiconductor device, according to claim 11, wherein the first and the second oxide semiconductor layers are formed by the sputtering method in which a target including indium, gallium, and zinc is used.

13. The method for manufacturing a semiconductor device according to claim 11, wherein the first plasma treatment and the formation of the first oxide semiconductor layer are performed in the chamber in succession, and the second plasma treatment and the formation of the second oxide semiconductor layer are performed in the chamber in succession.

14. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a conductive layer over the gate insulating layer;

forming a first oxide semiconductor layer over the conductive layer;

forming a first stack in which the conductive layer and the first oxide semiconductor layer are stacked and a second stack in which the conductive layer and the first oxide semiconductor layer are stacked by etching the conductive layer and the first oxide semiconductor layer;

performing a plasma treatment on surfaces of the gate insulating layer, the first stack, and the second stack which are formed over the substrate in a chamber into which an inert gas is introduced; and

forming a second oxide semiconductor layer over the gate insulating layer, the first stack, and the second stack after the plasma treatment is performed,

wherein the first and the second oxide semiconductor layers are formed by a sputtering method at 20°

C. to 100°

C.

15. The method for manufacturing a semiconductor device, according to claim 14, wherein the first and the second oxide semiconductor layers are formed by the sputtering method in which a target including indium, gallium, and zinc is used.

16. The method for manufacturing a semiconductor device according to claim 14, wherein the plasma treatment and the formation of the second oxide semiconductor layer are performed in the chamber in succession.

17. The method for manufacturing a semiconductor device, according to claim 14, wherein an argon gas is used as the inert gas.

18. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a conductive layer over the gate insulating layer;

performing a first plasma treatment on a surface of the conductive layer;

forming a first oxide semiconductor layer over the conductive layer after the first plasma treatment is performed;

forming a first stack in which the conductive layer and the first oxide semiconductor layer are stacked and a second stack in which the conductive layer and the first oxide semiconductor layer are stacked by etching the conductive layer and the first oxide semiconductor layer;

performing a second plasma treatment on surfaces of the gate insulating layer, the first stack, and the second stack; and

forming a second oxide semiconductor layer over the gate insulating layer, the first stack, and the second stack after the second plasma treatment is performed,

wherein the first and the second oxide semiconductor layers are formed by a sputtering method at 20°

C. to 100°

C.

19. The method for manufacturing a semiconductor device, according to claim 18, wherein the first and the second oxide semiconductor layers are formed by the sputtering method in which a target including indium, gallium, and zinc is used.

20. The method for manufacturing a semiconductor device according to claim 18, wherein the first plasma treatment and the formation of the first oxide semiconductor layer are performed in a chamber in succession, and the second plasma treatment and the formation of the second oxide semiconductor layer are performed in a chamber in succession.