Method for manufacturing semiconductor device

• US 8,440,510 B2
• Filed: 05/10/2011
• Issued: 05/14/2013
• Est. Priority Date: 05/14/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Pham, Hoai V
• Application Number:
  US13/104,574
• Publication Number:
  US 20110281394A1
• Time in Patent Office: 735 Days
• Field of Search: 438/149, 438/150, 438/151, 438/153
• US Class Current: 438/149
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The method for manufacturing the semiconductor device is as follows: forming a gate electrode; forming a first insulating film over the gate electrode; performing halogen doping treatment on the first insulating film so that the first insulating film is supplied with a halogen atom; forming an oxide semiconductor film over the first insulating film so as to overlap with the gate electrode; performing heat treatment on the oxide semiconductor film so that a hydrogen atom is removed in the oxide semiconductor film; performing oxygen doping treatment on the oxide semiconductor film from which the hydrogen atom is removed so that the oxide semiconductor film is supplied with an oxygen atom; performing heat treatment on the oxide semiconductor film to which the oxygen atom is supplied; forming a source electrode and a drain electrode on and in contact with the oxide semiconductor film; forming a second insulating film.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode;

forming a first insulating film over the gate electrode;

performing halogen doping treatment on the first insulating film so that the first insulating film is supplied with a halogen atom;

forming an oxide semiconductor film over the first insulating film so that the oxide semiconductor film overlaps with the gate electrode;

performing first heat treatment on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed;

performing oxygen doping treatment on the oxide semiconductor film from which the hydrogen atom is removed so that the oxide semiconductor film is supplied with an oxygen atom;

performing second heat treatment on the oxide semiconductor film to which the oxygen atom is supplied;

forming a source electrode and a drain electrode on and in contact with the oxide semiconductor film; and

forming a second insulating film on and in contact with the oxide semiconductor film.

2. The method for manufacturing a semiconductor device, according to claim 1, further comprising the step of forming a third insulating film containing nitrogen so that the third insulating film containing nitrogen covers the second insulating film.

3. The method for manufacturing a semiconductor device, according to claim 1, further comprising the step of processing the oxide semiconductor film into an island-shaped oxide semiconductor film.

4. The method for manufacturing a semiconductor device, according to claim 3, wherein at least part of the first insulating film is processed into an island-shaped first insulating film in the step of processing the oxide semiconductor film into the island-shaped oxide semiconductor film.

5. The method for manufacturing a semiconductor device, according to claim 3, wherein the second insulating film is in contact with the first insulating film.

6. The method for manufacturing a semiconductor device, according to claim 1, wherein at least one of the first insulating film and the second insulating film contains a constituent element of the oxide semiconductor film.

7. The method for manufacturing a semiconductor device, according to claim 1, wherein at least one of the first insulating film and the second insulating film has a stacked-layer structure comprising a third insulating film containing a constituent element of the oxide semiconductor film and a fourth insulating film containing an element different from the constituent element of the oxide semiconductor film.

8. The method for manufacturing a semiconductor device, according to claim 1, wherein at least one of the first insulating film and the second insulating film contains gallium.

9. The method for manufacturing a semiconductor device, according to claim 1, wherein at least one of the first insulating film and the second insulating film has a stacked-layer structure comprising a third insulating film containing gallium and a fourth insulating film containing a material different from gallium.

10. The method for manufacturing a semiconductor device, according to claim 1, wherein chlorine is used in the halogen doping treatment.

11. The method for manufacturing a semiconductor device, according to claim 1, further comprising the step of forming a third insulating film over the first insulating film.

12. The method for manufacturing a semiconductor device, according to claim 11,

wherein the first insulating film contains an element different from a constituent element of the oxide semiconductor film, and

wherein the third insulating film contains the constituent element of the oxide semiconductor film.

13. The method for manufacturing a semiconductor device, according to claim 11,

wherein the first insulating film contains a material different from gallium, and

wherein the third insulating film contains gallium.