Forming a phase change memory with an ovonic threshold switch
First Claim
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1. A method comprising:
- forming an ovonic threshold switch device including a chalcogenide layer and a plug wherein the chalcogenide layer overlaps the plug on two opposed sides;
forming an ovonic memory device directly underlying said ovonic threshold switch device; and
forming said ovonic memory device including a chalcogenide layer which is defined to have a dimension in common with said ovonic threshold switch device.
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Abstract
A phase change memory may include an ovonic threshold switch formed over an cyanic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.
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Citations
8 Claims
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1. A method comprising:
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forming an ovonic threshold switch device including a chalcogenide layer and a plug wherein the chalcogenide layer overlaps the plug on two opposed sides; forming an ovonic memory device directly underlying said ovonic threshold switch device; and forming said ovonic memory device including a chalcogenide layer which is defined to have a dimension in common with said ovonic threshold switch device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification