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Forming a phase change memory with an ovonic threshold switch

  • US 8,440,535 B2
  • Filed: 05/03/2012
  • Issued: 05/14/2013
  • Est. Priority Date: 10/28/2005
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming an ovonic threshold switch device including a chalcogenide layer and a plug wherein the chalcogenide layer overlaps the plug on two opposed sides;

    forming an ovonic memory device directly underlying said ovonic threshold switch device; and

    forming said ovonic memory device including a chalcogenide layer which is defined to have a dimension in common with said ovonic threshold switch device.

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