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Semiconductor device and structure

  • US 8,440,542 B2
  • Filed: 08/26/2011
  • Issued: 05/14/2013
  • Est. Priority Date: 10/11/2010
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • preparing a first monocrystalline layer comprising first transistors, wherein said first transistors are part of peripheral memory control circuits;

    preparing a second monocrystalline layer comprising second monocrystalline layer semiconductor regions, said second monocrystalline layer overlying said first monocrystalline layer;

    preparing a third monocrystalline layer comprising third monocrystalline layer semiconductor regions, said third monocrystalline layer overlying said second monocrystalline layer; and

    etching portions of said second monocrystalline layer and portions of said third monocrystalline layer as part of forming at least one second transistor at least partly within said second monocrystalline layer.

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