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Methods for manufacturing low noise chemically-sensitive field effect transistors

  • US 8,441,044 B2
  • Filed: 07/20/2012
  • Issued: 05/14/2013
  • Est. Priority Date: 12/14/2006
  • Status: Active Grant
First Claim
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1. A method for manufacturing a chemically-sensitive field effect transistor (chemFET), the method comprising:

  • forming a gate dielectric on a semiconductor substrate; and

    forming a floating gate structure on the gate dielectric, comprising;

    forming a gate element on the gate dielectric;

    forming a first conductive element and a sensor plate in a first conductor layer overlying the gate element, wherein the first conductive element is electrically connected to the gate element, and the sensor plate is electrically isolated from the gate element; and

    forming a jumper element in a second conductor layer overlying the first conductor layer, the jumper element electrically connecting the sensor plate to the first conductive element; and

    forming a passivation layer over the sensor plate.

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