×

Semiconductor device and manufacturing method of the same

  • US 8,441,065 B2
  • Filed: 08/05/2010
  • Issued: 05/14/2013
  • Est. Priority Date: 12/16/2005
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device for use in an automobile, including:

  • a semiconductor substrate;

    a P-channel trench gate MOSFET having a gate electrode, a source and a drain, disposed over a main surface of the semiconductor substrate; and

    a protection circuit coupled to the gate electrode of the P-channel trench gate MOSFET,the protection circuit comprising a P-channel planar gate MOSFET disposed over the main surface of the semiconductor substrate,wherein a conduction type of the gate electrode of the P-channel trench gate MOSFET is P-type,wherein a conduction type of a gate electrode of the P-channel planar gate MOSFET is n-type,wherein the source of the P-channel trench gate MOSFET is coupled to a battery in the automobile,wherein the drain of the P-channel trench gate MOSFET is coupled to a load in the automobile,wherein the load is coupled to a ground terminal in the automobile.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×