Cu pillar bump with non-metal sidewall protection structure
First Claim
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1. An integrated circuit device, comprising:
- a semiconductor substrate;
a conductive pillar formed over the semiconductor substrate, and having a sidewall surface and a top surface;
a under-bump-metallurgy (UBM) layer formed between the semiconductor substrate and the conductive pillar, and having a surface region adjacent to and extending from the sidewall surface of the conductive pillar; and
a protection structure formed on the sidewall surface of the conductive pillar and the surface region of the UBM layer;
wherein the protection structure is formed of a non-metal material, and the conductive pillar is formed of a copper-containing layer.
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Abstract
A sidewall protection structure is provided for covering at least a portion of a sidewall surface of a bump structure, in which a protection structure on the sidewalls of a Cu pillar and a surface region of an under-bump-metallurgy (UBM) layer is formed of at least one non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.
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Citations
20 Claims
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1. An integrated circuit device, comprising:
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a semiconductor substrate; a conductive pillar formed over the semiconductor substrate, and having a sidewall surface and a top surface; a under-bump-metallurgy (UBM) layer formed between the semiconductor substrate and the conductive pillar, and having a surface region adjacent to and extending from the sidewall surface of the conductive pillar; and a protection structure formed on the sidewall surface of the conductive pillar and the surface region of the UBM layer; wherein the protection structure is formed of a non-metal material, and the conductive pillar is formed of a copper-containing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A packaging assembly, comprising:
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a first substrate; a bump structure formed on the first substrate, wherein the bump structure comprises an under-bump-metallurgy (UBM) layer formed on the first substrate, and a copper pillar formed on the UBM layer, wherein the UBM layer has a surface region adjacent to and extending from a sidewall surface of the copper pillar; a non-metal protection structure covering the sidewall surface of the copper pillar and the surface region of the UBM layer; a second substrate; and a joint solder layer formed between the second substrate and the bump structure. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification