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Cu pillar bump with non-metal sidewall protection structure

  • US 8,441,124 B2
  • Filed: 04/29/2010
  • Issued: 05/14/2013
  • Est. Priority Date: 04/29/2010
  • Status: Active Grant
First Claim
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1. An integrated circuit device, comprising:

  • a semiconductor substrate;

    a conductive pillar formed over the semiconductor substrate, and having a sidewall surface and a top surface;

    a under-bump-metallurgy (UBM) layer formed between the semiconductor substrate and the conductive pillar, and having a surface region adjacent to and extending from the sidewall surface of the conductive pillar; and

    a protection structure formed on the sidewall surface of the conductive pillar and the surface region of the UBM layer;

    wherein the protection structure is formed of a non-metal material, and the conductive pillar is formed of a copper-containing layer.

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