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Low-leakage diodes and methods of forming the same

  • US 8,441,305 B2
  • Filed: 08/30/2010
  • Issued: 05/14/2013
  • Est. Priority Date: 08/30/2010
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a bipolar transistor configured to operate as a diode, wherein the diode can be biased in a forward-biased mode of operation, a reverse-biased mode of operation, and an equilibrium mode of operation, the bipolar transistor comprising;

    an emitter configured to operate as a first terminal of the diode;

    a base configured to operate as a second terminal of the diode; and

    a collector configured to receive a collector bias voltage, wherein the collector bias voltage is configured to be different than a voltage of the base when the diode is in the reverse-biased mode of operation, and wherein the collector bias voltage is configured relative to a voltage of the emitter to substantially minimize a diffusion leakage current; and

    a bias circuit configured to generate the collector bias voltage, wherein the bias circuit comprises a gain circuit having an input and an output, wherein the output of the gain circuit is electrically connected to the collector, and wherein the input of the gain circuit is electrically connected to the emitter.

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