Data storage device employing a run-length mapping table and a single address mapping table
First Claim
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1. A data storage device comprising:
- a non-volatile memory comprising a plurality of memory segments; and
control circuitry operable to;
receive a write command comprising a logical block address (LBA);
determine a number of consecutive memory segments to access in response to the write command;
when the number of consecutive memory segments to access is greater than a threshold of more than one memory segment, create a new run-length mapping entry in a run-length mapping table (RLMT); and
when the number of consecutive memory segments to access is not greater than the threshold, create at least two new single address mapping entries in a single address mapping table (SAMT).
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Abstract
A data storage device is disclosed comprising a non-volatile memory comprising a plurality of memory segments. When a write command comprising a logical block address (LBA) is received, a number of consecutive memory segments to access in response to the write command is determined. When the number of consecutive memory segments to access is greater than a threshold, a new run-length mapping entry in a run-length mapping table (RLMT) is created. When the number of memory segments to access is not greater than a threshold, at least one new single address mapping entry in a single address mapping table (SAMT) is created.
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Citations
24 Claims
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1. A data storage device comprising:
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a non-volatile memory comprising a plurality of memory segments; and control circuitry operable to; receive a write command comprising a logical block address (LBA); determine a number of consecutive memory segments to access in response to the write command; when the number of consecutive memory segments to access is greater than a threshold of more than one memory segment, create a new run-length mapping entry in a run-length mapping table (RLMT); and when the number of consecutive memory segments to access is not greater than the threshold, create at least two new single address mapping entries in a single address mapping table (SAMT). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of operating a data storage device comprising a non-volatile memory comprising a plurality of memory segments, the method comprising:
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receiving a write command comprising a logical block address (LBA); determining a number of consecutive memory segments to access in response to the write command; when the number of consecutive memory segments to access is greater than a threshold of more than one memory segment, creating a new run-length mapping entry in a run-length mapping table (RLMT); and when the number of consecutive memory segments to access is not greater than the threshold, creating at least two new single address mapping entries in a single address mapping table (SAMT). - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification