Device for stripping a wafer from a carrier

• US 8,443,864 B2
• Filed: 03/16/2010
• Issued: 05/21/2013
• Est. Priority Date: 03/18/2009
• Status: Active Grant

• Current Assignee: EV Group GmbH (Thallner Privatstiftung)
• Original Assignee: EV Group GmbH (Thallner Privatstiftung)
• Inventors: Thallner, Erich
• Primary Examiner(s): Osele, Mark A
• Assistant Examiner(s): HARM, NICKOLAS R
• Application Number:
  US13/254,940
• Publication Number:
  US 20120000613A1
• Time in Patent Office: 1,162 Days
• Field of Search: 156/930, 156/931, 156/932, 156/941, 156/943
• US Class Current: 156/758
• CPC Class Codes: B32B 43/006 Delaminating
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: Y10S 156/93 Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
• CPC Class Codes: Y10S 156/931 Peeling away backing
• CPC Class Codes: Y10S 156/932 with poking during delaminating, e.g. jabbing release sheet backing to remove wafer
• CPC Class Codes: Y10S 156/941 Means for delaminating semiconductive product
• CPC Class Codes: Y10S 156/943 with poking delaminating means, e.g. jabbing means
• CPC Class Codes: Y10T 156/1111 Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
• CPC Class Codes: Y10T 156/19 Delaminating means
• CPC Class Codes: Y10T 156/1911 Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
• CPC Class Codes: Y10T 156/1917 Electromagnetic radiation delaminating means [e.g., microwave, uv, ir, etc.]
• CPC Class Codes: Y10T 156/1944 Vacuum delaminating means [e.g., vacuum chamber, etc.]
• CPC Class Codes: Y10T 156/1967 Cutting delaminating means

Abstract

Device and method for stripping a wafer from a carrier that is connected to the wafer by an interconnect layer. The device includes a receiving means for accommodating the carrier-wafer combination consisting of the carrier and the wafer, a connection release means for breaking the connection provided by the interconnect layer between the carrier and the wafer, and stripping means for stripping the wafer from the carrier, or for stripping the carrier from the wafer. The connection release means operates in a temperature range from 0° to 350° C., especially from 10° to 200° C., preferably from 20° to 80° C., and more preferably at ambient temperature. The method includes the steps of accommodating the carrier-wafer combination on a receiving means, breaking the connection provided by the interconnect layer by a connection release means, and stripping the wafer from the carrier, or stripping the carrier from the wafer by stripping means.

Claims

1. Device for stripping a wafer from a carrier, wherein the carrier is fixed to the wafer by an interconnect layer that provides a connection between the carrier and the wafer, said device comprising:

a receiving means for receiving a carrier-wafer combination comprised of the carrier and the wafer, said interconnect layer providing the connection between the carrier and the wafer at a peripheral edge of the carrier-wafer combination;

a connection release means for unfixing the connection between the carrier and the wafer, said connection release means having at least one release device that includes;

a working chamber for surrounding at least a portion of the peripheral edge of the carrier-wafer combination, and

means for delivering a solvent to the working chamber, said solvent for dissolving the interconnect layer;

a rotation means for rotating the carrier-wafer combination to move the peripheral edge of the carrier-wafer combination through the working chamber of the connection release means to contact the peripheral edge of the carrier-wafer combination with the solvent, thereby dissolving the interconnect layer at the peripheral edge and breaking the connection between the carrier and the wafer; and

stripping means for stripping the wafer from the carrier, or for stripping the carrier from the wafer.

2. Device according to claim 1, wherein the connection release means operates in a temperature range from 10°

C. to 200°

C.

3. Device according to claim 1, wherein the connection release means operates essentially without heating.

4. Device according to claim 1, wherein the connection release means further comprises:

mechanical separating means including a blade for cutting through the interconnect layer, and for detaching the interconnect layer.

5. Device according to claim 1, wherein the connection release means further comprises:

a UV light source for detaching the interconnect layer.

6. Device according to claim 1, wherein the connection release means operates on the peripheral edge of the carrier-wafer combination.

7. Device according to claim 1, wherein said at least one release device contacts the receiving means and/or the stripping means to seal said working chamber.

8. Device according to claim 1, wherein the working chamber is sealed in a vicinity of the peripheral edge of the carrier-wafer combination.

9. Device according to claim 8, wherein the working chamber receives a sector of the peripheral edge of the carrier-wafer combination.

10. Device according to claim 1, wherein the stripping means is rotatable.

11. Device according to claim 1, wherein the interconnect layer is a thermoplastic adhesive.

12. Device according to claim 1, wherein the connection release means includes a solvent line for supplying detergents for cleaning the wafer.

13. Device according to claim 1, wherein said working chamber has a U-shaped cross-section.

14. Device according to claim 13, wherein said working chamber has an open end for receiving a sector of the peripheral edge of the carrier-wafer combination.

15. Device according to claim 1, wherein said at least one release device includes a side wall and a pair of legs extending therefrom to define the working chamber.

16. Device according to claim 15, wherein said pair of legs have respective faces that contact the receiving means and/or the stripping means to seal said working chamber.

17. Device according to claim 1, wherein said rotation means includes a rotating shaft.

18. Device according to claim 1, wherein the connection release means operates in a temperature range from 0°

C. to 350°

C.

19. Device for releasing an interconnect layer that provides a connection between a carrier and a wafer which forms a carrier-wafer combination, said device comprising:

a stripping means for stripping the wafer from the carrier, or for stripping the carrier from the wafer;

a rotation means for rotation of the carrier-wafer combination in a release position; and

a connection release means including;

a working chamber in which at least a section of the peripheral edge of the carrier-wafer combination can be accommodated in the working chamber, and

means for delivering a solvent to the working chamber, said solvent for dissolving the interconnect layer at the peripheral edge of the carrier-wafer combination.

20. Device according to claim 19, wherein the solvent acts at the peripheral edge of the carrier-wafer combination.

21. Device according to claim 19, wherein the connection release means comprises an immersion bath.

22. Device according to one claim 19, wherein the connection release means has a U-shaped cross section that defines said working chamber.

23. Device according to claim 19, wherein said working chamber is defined by a pair of legs and a side wall, said working chamber open towards the carrier-wafer combination.