×

Low temperature silicon oxide conversion

  • US 8,445,078 B2
  • Filed: 09/20/2011
  • Issued: 05/21/2013
  • Est. Priority Date: 04/20/2011
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a silicon oxide layer on a substrate, the method comprising:

  • forming a silicon-nitrogen-and-hydrogen-containing layer by;

    flowing an unexcited precursor into a remote plasma region to produce a radical-precursor,combining a silicon-containing precursor with the radical-precursor in a plasma-free substrate processing region, anddepositing the silicon-nitrogen-and-hydrogen-containing layer on the substrate;

    curing the silicon-nitrogen-and-hydrogen-containing layer in an ozone-containing atmosphere to convert the silicon-nitrogen-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer; and

    exposing the silicon-and-oxygen-containing layer to a humid atmosphere having at least 50% relative humidity to convert the silicon-and-oxygen-containing layer to a silicon oxide layer, wherein the substrate temperature is greater than 25°

    C. and less than 100°

    C. during the exposing operation.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×