Low temperature silicon oxide conversion
First Claim
1. A method of forming a silicon oxide layer on a substrate, the method comprising:
- forming a silicon-nitrogen-and-hydrogen-containing layer by;
flowing an unexcited precursor into a remote plasma region to produce a radical-precursor,combining a silicon-containing precursor with the radical-precursor in a plasma-free substrate processing region, anddepositing the silicon-nitrogen-and-hydrogen-containing layer on the substrate;
curing the silicon-nitrogen-and-hydrogen-containing layer in an ozone-containing atmosphere to convert the silicon-nitrogen-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer; and
exposing the silicon-and-oxygen-containing layer to a humid atmosphere having at least 50% relative humidity to convert the silicon-and-oxygen-containing layer to a silicon oxide layer, wherein the substrate temperature is greater than 25°
C. and less than 100°
C. during the exposing operation.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).
-
Citations
11 Claims
-
1. A method of forming a silicon oxide layer on a substrate, the method comprising:
-
forming a silicon-nitrogen-and-hydrogen-containing layer by; flowing an unexcited precursor into a remote plasma region to produce a radical-precursor, combining a silicon-containing precursor with the radical-precursor in a plasma-free substrate processing region, and depositing the silicon-nitrogen-and-hydrogen-containing layer on the substrate; curing the silicon-nitrogen-and-hydrogen-containing layer in an ozone-containing atmosphere to convert the silicon-nitrogen-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer; and exposing the silicon-and-oxygen-containing layer to a humid atmosphere having at least 50% relative humidity to convert the silicon-and-oxygen-containing layer to a silicon oxide layer, wherein the substrate temperature is greater than 25°
C. and less than 100°
C. during the exposing operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
Specification