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Oxide-nitride stack gate dielectric

  • US 8,445,381 B2
  • Filed: 12/20/2007
  • Issued: 05/21/2013
  • Est. Priority Date: 09/26/2003
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor structure, comprising:

  • forming an oxide layer on a substrate;

    forming a silicon nitride layer on the oxide layer;

    annealing layers in NO; and

    annealing the layers in ammonia;

    wherein the equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.

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