Oxide-nitride stack gate dielectric
First Claim
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1. A method of making a semiconductor structure, comprising:
- forming an oxide layer on a substrate;
forming a silicon nitride layer on the oxide layer;
annealing layers in NO; and
annealing the layers in ammonia;
wherein the equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
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Abstract
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
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Citations
8 Claims
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1. A method of making a semiconductor structure, comprising:
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forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing layers in NO; and annealing the layers in ammonia; wherein the equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a gate dielectric, comprising:
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forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO and ammonia; annealing the layers in ammonia, wherein the oxide layer has a thickness of 6-10 Angstroms, and the silicon nitride layer has a thickness of 10-30 Angstroms.
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Specification