Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a pixel portion over a substrate, the pixel portion comprising a first transistor; and
a driver circuit portion over the substrate, the driver circuit portion comprising a second transistor,wherein the first transistor comprises;
a first gate electrode layer over the substrate;
a first gate insulating layer over the first gate electrode layer;
a first oxide semiconductor layer including a first channel region over the first gate insulating layer; and
a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer,wherein the second transistor comprises;
a second gate electrode layer over the substrate;
a second gate insulating layer over the second gate electrode layer;
a second oxide semiconductor layer including a second channel region over the second gate insulating layer; and
a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer,wherein the first channel region includes a first region including excess oxygen,wherein the second channel region includes a second region including excess oxygen, andwherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer.
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Abstract
An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a pixel portion over a substrate, the pixel portion comprising a first transistor; and a driver circuit portion over the substrate, the driver circuit portion comprising a second transistor, wherein the first transistor comprises; a first gate electrode layer over the substrate; a first gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer including a first channel region over the first gate insulating layer; and a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer, wherein the second transistor comprises; a second gate electrode layer over the substrate; a second gate insulating layer over the second gate electrode layer; a second oxide semiconductor layer including a second channel region over the second gate insulating layer; and a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer, wherein the first channel region includes a first region including excess oxygen, wherein the second channel region includes a second region including excess oxygen, and wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (2, 3, 4, 13, 16)
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5. A semiconductor device comprising:
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a pixel portion over a substrate, the pixel portion comprising a first transistor; and a driver circuit portion over the substrate, the driver circuit portion comprising a second transistor, wherein the first transistor comprises; a first gate electrode layer over the substrate; a first gate insulating layer over the first gate electrode layer; a first semiconductor layer including a first channel region over the first gate insulating layer; and a first source electrode layer and a first drain electrode layer over the first semiconductor layer, wherein the second transistor comprises; a second gate electrode layer over the substrate; a second gate insulating layer over the second gate electrode layer; a second semiconductor layer including a second channel region over the second gate insulating layer; and a second source electrode layer and a second drain electrode layer over the second semiconductor layer, wherein the first channel region includes a first region including excess oxygen, wherein the second channel region includes a second region including excess oxygen, and wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (6, 7, 8, 14, 17)
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9. A semiconductor device comprising:
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a pixel portion over a substrate, the pixel portion comprising a first transistor; and a driver circuit portion over the substrate, the driver circuit portion comprising a second transistor, wherein the first transistor comprises; a first gate electrode layer over the substrate; a first gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer including a first channel region over the first gate insulating layer; and a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer, wherein the second transistor comprises; a second gate electrode layer over the substrate; a second gate insulating layer over the second gate electrode layer; a second oxide semiconductor layer including a second channel region over the second gate insulating layer; and a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer, wherein the first channel region includes a first region including excess oxygen, wherein the second channel region includes a second region including excess oxygen, wherein the first region is in contact with a first oxide insulating layer, wherein the second region is in contact with a second oxide insulating layer, and wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (10, 11, 12, 15, 18)
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Specification