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Thin film light emitting diode

  • US 8,445,921 B2
  • Filed: 11/10/2009
  • Issued: 05/21/2013
  • Est. Priority Date: 06/26/2002
  • Status: Active Grant
First Claim
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1. A vertical topology light emitting device, comprising:

  • a GaN-based semiconductor structure having a first surface, a second surface and a side surface, the semiconductor structure comprising an active layer, wherein the first surface is opposite the second surface;

    a first electrode on the first surface of the semiconductor structure;

    a second electrode on the second surface of the semiconductor structure;

    an insulative layer on the first surface of the semiconductor structure;

    a wavelength converting layer on the insulative layer, wherein the insulative layer is disposed between the first surface of the semiconductor structure and the wavelength converting layer; and

    an open space corresponding to the first electrode, wherein the open space is a portion not covered by the insulative layer and the wavelength converting layer.

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