Low noise chemically-sensitive field effect transistors
First Claim
1. A chemically-sensitive field effect transistor (chemFET), comprising:
- a substrate including a doped semiconductor region;
a gate dielectric on the region;
a floating gate structure, comprising;
a gate element on the gate dielectric;
a first conductive element and a sensor plate in a first conductor layer overlying the gate element, wherein the first conductive element is electrically coupled to the gate element by an interlayer connector, and the sensor plate is separated from the first conductive element by an interlayer dielectric;
a jumper element in a second conductor layer overlying the first conductor layer, the jumper element electrically connecting the sensor plate to the first conductive element; and
a passivation layer over the sensor plate.
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Accused Products
Abstract
Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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Citations
11 Claims
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1. A chemically-sensitive field effect transistor (chemFET), comprising:
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a substrate including a doped semiconductor region; a gate dielectric on the region; a floating gate structure, comprising; a gate element on the gate dielectric; a first conductive element and a sensor plate in a first conductor layer overlying the gate element, wherein the first conductive element is electrically coupled to the gate element by an interlayer connector, and the sensor plate is separated from the first conductive element by an interlayer dielectric; a jumper element in a second conductor layer overlying the first conductor layer, the jumper element electrically connecting the sensor plate to the first conductive element; and a passivation layer over the sensor plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification