Semiconductor device and method of manufacturing the same

• US 8,445,962 B2
• Filed: 10/25/2010
• Issued: 05/21/2013
• Est. Priority Date: 03/02/1999
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Murakami, Satoshi, Yamazaki, Shunpei, Koyama, Jun, Tanaka, Yukio, Hirakata, Yoshiharu, Osam, Mitsuaki
• Primary Examiner(s): Lee, Eugene
• Application Number:
  US12/911,083
• Publication Number:
  US 20110095312A1
• Time in Patent Office: 939 Days
• Field of Search: 257/347, 257/59, 257/72, 257/E29.151
• US Class Current: 257/347
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented.

Claims

1. A semiconductor device comprising:

a transistor comprising;

a semiconductor film;

a gate insulating film adjacent to the semiconductor film; and

a gate adjacent to the semiconductor film with the gate insulating film interposed therebetween;

a first wiring electrically connected to the semiconductor film;

a first insulating film over the transistor and the first wiring, the first insulating film including a first opening over the first wiring;

a color filter over the first insulating film, the color filter including a second opening over the first opening;

a second insulating film over the color filter, the second insulating film including a third opening over the first opening; and

a pixel electrode over the second insulating film, the pixel electrode being in contact with the first wiring through the first to third openings,

wherein the first insulating film is interposed between the first wiring and the color filter so that the first wiring is not in contact with the color filter in the first to third openings,

wherein a portion where the pixel electrode is in contact with the first wiring is provided over a first region and a second region,

wherein the first region and the second region each include a semiconductor, and

wherein an impurity concentration of the first region is higher than that of the second region.

2. The semiconductor device according to claim 1, wherein the semiconductor film comprises crystalline silicon.

3. The semiconductor device according to claim 1,

wherein the semiconductor film comprises the first region and the second region, and

wherein the first region is an LDD region.

4. The semiconductor device according to claim 1, wherein the gate is over the semiconductor film.

5. The semiconductor device according to claim 1, wherein the color filter has a flat upper surface.

6. The semiconductor device according to claim 1, wherein the second insulating film includes an organic compound.

7. The semiconductor device according to claim 1, further comprising a second wiring interposed between the second insulating film and the pixel electrode,

wherein the second wiring comprises a material capable of anodic oxidation.

8. The semiconductor device according to claim 1, wherein the transistor further comprises another gate.

9. The semiconductor device according to claim 1, wherein the semiconductor device is selected from the group consisting of an active matrix liquid crystal display, a liquid crystal display panel, an active matrix EL display, an active matrix EC display, and an electro-optical device.

10. A semiconductor device comprising a pixel, the pixel comprising:

a transistor comprising;

a semiconductor film;

a gate insulating film adjacent to the semiconductor film; and

a gate adjacent to the semiconductor film with the gate insulating film interposed therebetween;

a first wiring electrically connected to the semiconductor film;

a first insulating film over the transistor and the first wiring, the first insulating film including a first opening over the first wiring;

a color filter over the first insulating film, the color filter including a second opening over the first opening;

a second insulating film over the color filter, the second insulating film including a third opening over the first opening; and

a pixel electrode over the second insulating film, the pixel electrode being in contact with the first wiring through the first to third openings,

wherein the first insulating film is interposed between the first wiring and the color filter so that the first wiring is not in contact with the color filter in the first to third openings,

wherein a portion where the pixel electrode is in contact with the first wiring is overlapped with a first region and a second region,

wherein the first region and the second region each include a semiconductor, and

wherein an impurity concentration of the first region is higher than that of the second region.

11. The semiconductor device according to claim 10, wherein the semiconductor film comprises crystalline silicon.

12. The semiconductor device according to claim 10,

wherein the semiconductor film comprises the first region and the second region, and

wherein the first region is an LDD region.

13. The semiconductor device according to claim 10, wherein the gate is over the semiconductor film.

14. The semiconductor device according to claim 10, wherein the color filter has a flat upper surface.

15. The semiconductor device according to claim 10, wherein the second insulating film includes an organic compound.

16. The semiconductor device according to claim 10, further comprising a second wiring interposed between the second insulating film and the pixel electrode,

wherein the second wiring comprises a material capable of anodic oxidation.

17. The semiconductor device according to claim 10, wherein the transistor further comprises another gate.

18. The semiconductor device according to claim 10, wherein the semiconductor device is selected from the group consisting of an active matrix liquid crystal display, a liquid crystal display panel, an active matrix EL display, an active matrix EC display, and an electro-optical device.

19. A semiconductor device comprising a pixel, the pixel comprising:

a transistor comprising;

a semiconductor film;

a gate insulating film adjacent to the semiconductor film; and

a gate adjacent to the semiconductor film with the gate insulating film interposed therebetween;

a first wiring electrically connected to the semiconductor film;

a first insulating film over the transistor and the first wiring, the first insulating film including a first opening over the first wiring;

a color filter over the first insulating film, the color filter including a second opening over the first opening;

a second insulating film over the color filter, the second insulating film including a third opening over the first opening;

a third insulating film interposed between the first insulating film and the color filter the third insulating film including a fourth opening over the first opening; and

a pixel electrode over the second insulating film, the pixel electrode being in contact with the first wiring through the first to fourth openings,

wherein the first insulating film is interposed between the first wiring and the color filter so that the first wiring is not in contact with the color filter in the first to fourth openings,

wherein a portion where the pixel electrode is in contact with the first wiring is overlapped with a first region and a second region,

wherein the first region and the second region each include a semiconductor, and

wherein an impurity concentration of the first region is higher than that of the second region.

20. The semiconductor device according to claim 19, wherein the third insulating film includes an organic compound.

21. The semiconductor device according to claim 19, wherein the semiconductor film comprises crystalline silicon.

22. The semiconductor device according to claim 19,

wherein the semiconductor film comprises the first region and the second region, and

wherein the first region is an LDD region.

23. The semiconductor device according to claim 19, wherein the gate is over the semiconductor film.

24. The semiconductor device according to claim 19, wherein the color filter has a flat upper surface.

25. The semiconductor device according to claim 19, wherein the second insulating film includes an organic compound.

26. The semiconductor device according to claim 19, further comprising a second wiring interposed between the second insulating film and the pixel electrode,

wherein the second wiring comprises a material capable of anodic oxidation.

27. The semiconductor device according to claim 19, wherein the transistor further comprises another gate.

28. The semiconductor device according to claim 19, wherein the semiconductor device is selected from the group consisting of an active matrix liquid crystal display, a liquid crystal display panel, an active matrix EL display, an active matrix EC display, and an electro-optical device.