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Nonvolatile memory device and related programming method

  • US 8,446,766 B2
  • Filed: 09/27/2012
  • Issued: 05/21/2013
  • Est. Priority Date: 03/25/2009
  • Status: Active Grant
First Claim
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1. A memory system, comprising:

  • a nonvolatile memory device including a storage space, the storage space having a plurality of NAND strings and divided into at least two or more storage regions; and

    a controller configured to manage an erase/program cycle table in which wearing levels of the at least two or more storage regions are stored,wherein when a program operation on the storage space is requested, the controller selects one of the at least two or more storage regions in the storage space based on wearing levels stored in the erase/program cycle table, the selected storage region having a lowest wearing level.

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