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Methods of curing non-carbon flowable CVD films

  • US 8,449,942 B2
  • Filed: 09/28/2010
  • Issued: 05/28/2013
  • Est. Priority Date: 11/12/2009
  • Status: Active Grant
First Claim
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1. A method of forming a silicon oxygen layer on a substrate in a plasma-free substrate processing region in a substrate processing chamber, the method comprising:

  • depositing a carbon-free silicon-nitrogen-and-hydrogen-containing layer on the substrate; and

    curing the silicon-nitrogen-and-hydrogen-containing layer at a curing temperature in an ozone-containing atmosphere to convert the silicon-nitrogen-and-hydrogen-containing layer into the silicon oxide layer, wherein the curing temperature is increased during the curing operation from a temperature below or about 250°

    C. to a higher temperature above 400°

    C. to further convert the carbon-free silicon-nitrogen-and-hydrogen-containing layer to the silicon oxide layer.

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