Method of reducing floating body effect of SOI MOS device via a large tilt ion implantation

• US 8,450,195 B2
• Filed: 07/14/2010
• Issued: 05/28/2013
• Est. Priority Date: 01/28/2010
• Status: Expired due to Fees

• Current Assignee: Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
• Original Assignee: Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
• Inventors: Chen, Jing, Huang, Xiaolu, Luo, Jiexin, Wu, Qingqing, Wang, Xi
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): Patel, Reema
• Application Number:
  US12/937,258
• Publication Number:
  US 20120021571A1
• Time in Patent Office: 1,049 Days
• Field of Search: 438/302, 438/525, 438/526, 438/305
• US Class Current: 438/525
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/78615 with a body contact

Abstract

The present invention discloses a method of reducing floating body effect of SOI MOS device via a large tilt ion implantation including a step of: (a) implanting ions in an inclined direction into an NMOS with a buried insulation layer forming a highly doped P region under a source region of the NMOS and above the buried insulation layer, wherein the angle between a longitudinal line of the NMOS and the inclined direction is ranging from 15 to 45 degrees. Through this method, the highly doped P region under the source region and a highly doped N region form a tunnel junction so as to reduce the floating body effect. Furthermore, the chip area will not be increased, manufacturing process is simple and the method is compatible with conventional CMOS process.

Claims

1. A method of reducing floating body effect of partially depleted (PD) SOI MOS device via a large tilt ion implantation comprising a step of:

(a) implanting P-type ions in an inclined direction into an NMOS including a buried insulation layer, a highly doped N-type source region and a highly doped N-type drain region, to form a highly doped P region under the source region but not the drain region of the NMOS and above the buried insulation layer, thereby a PN junction under the source region but not the drain region for reducing floating body effect of PD SOI MOS device is formed;

wherein the angle between a longitudinal line of the NMOS and the inclined direction is ranging from 15 to 45 degrees.

2. The method, as recited in claim 1, wherein the angle is preferably 35 degrees.

3. The method, as recited in claim 1, wherein the ion is boron.

4. The method, as recited in claim 1, wherein the NMOS comprises an active area and a shallow trench isolation structure provided around the active area.

5. The method, as recited in claim 1, wherein the NMOS comprises a gate region and a dielectric spacer provided around the gate region.

6. The method, as recited in claim 5, wherein the gate region comprises a gate dielectric layer and a first gate electrode provided on the gate dielectric layer.

7. The method, as recited in claim 6, wherein the material of gate dielectric layer is selected from the group consisting of SiO2, SiOxNy, and high-k hafnium-based dielectric material.

8. The method, as recited in claim 6, wherein the first gate electrode is polysilicon gate electrode.

9. The method, as recited in claim 6, after step (a), further comprising steps of:

producing a stress protection layer around the gate region of the NMOS and removing the first gate electrode;

producing a second gate electrode in a region of the first gate electrode.

10. The method, as recited in claim 9, wherein the second gate electrode is selected from the group consisting of titanium, nickel, tantalum, tungsten, tantalum nitride, tungsten nitride, titanium nitride, titanium silicide, tungsten silicide and nickel silicide, or any combination thereof.

11. The method, as recited in claim 9, wherein the stress protection layer is made of silicon nitride.

12. The method, as recited in claim 1, wherein the buried insulation layer is buried oxide layer.