Semiconductor device including a transistor, and manufacturing method of semiconductor device

• US 8,450,735 B2
• Filed: 08/25/2010
• Issued: 05/28/2013
• Est. Priority Date: 09/02/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Noda, Kosei
• Primary Examiner(s): Doan, Theresa T
• Application Number:
  US12/868,295
• Publication Number:
  US 20110049518A1
• Time in Patent Office: 1,007 Days
• Field of Search: 257/57, 257/59, 257/72, 257/E21.704, 257/E21.46, 257/E29.296, 438/158
• US Class Current: 257/57
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 29/78684 having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys H01L29/7869 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to prevent contamination of a semiconductor film in a transistor or a semiconductor device including the transistor. Another object is to suppress variation in electrical characteristics and deterioration. A transistor including: a gate electrode layer provided over a substrate; a gate insulating film provided over the gate electrode layer; a semiconductor layer which is provided over the gate insulating film and which overlaps the gate electrode layer; a carbide layer provided over and in contact with a surface of the semiconductor layer; and a source electrode layer and a drain electrode layer which are electrically connected to the semiconductor layer is provided.

Claims

1. A semiconductor device comprising:

a gate electrode layer over a substrate;

a gate insulating film over the gate electrode layer;

a semiconductor layer over the gate insulating film, the semiconductor layer overlapping with the gate electrode layer;

a carbide layer containing hydrogen over and in contact with the semiconductor layer;

a source electrode layer electrically connected to the semiconductor layer; and

a drain electrode layer electrically connected to the semiconductor layer.

2. The semiconductor device according to claim 1,

wherein the source electrode layer is over and in contact with the semiconductor layer, and

wherein the drain electrode layer is over and in contact with the semiconductor layer.

3. The semiconductor device according to claim 1, further comprising a first layer and a second layer,

wherein the first layer is interposed between the semiconductor layer and the source electrode layer,

wherein a contact resistance of between the first layer and the source electrode layer is lower than that of between the semiconductor layer and the source electrode layer,

wherein the second layer is interposed between the semiconductor layer and the drain electrode layer, and

wherein a contact resistance of between the second layer and the drain electrode layer is lower than that of between the semiconductor layer and the drain electrode layer.

4. The semiconductor device according to claim 1, further comprising a first layer and a second layer,

wherein the first layer is interposed between the semiconductor layer and the source electrode layer,

wherein a resistance of the first layer is lower than that of the semiconductor layer,

wherein the second layer is interposed between the semiconductor layer and the drain electrode layer, and

wherein a resistance of second layer is lower than that of the semiconductor layer.

5. The semiconductor device according to claim 1,

wherein the carbide layer comprises a material selected from the group consisting of silicon carbide, silicon nitride carbide, germanium carbide, n-type silicon carbide, and p-type silicon carbide.

6. The semiconductor device according to claim 1,

wherein the semiconductor layer includes at least one of indium, zinc, and gallium.

7. The semiconductor device according to claim 1,

wherein the semiconductor layer, the source electrode layer, and the drain electrode layer are covered by the carbide layer.

8. The semiconductor device according to claim 1,

wherein the semiconductor layer includes an oxide semiconductor material.

9. The semiconductor device according to claim 1,

wherein the carbide layer comprises a material selected from the group consisting of silicon nitride carbide, germanium carbide, n-type silicon carbide, and p-type silicon carbide.

10. A semiconductor device comprising:

a gate electrode layer over a substrate;

a gate insulating film over the gate electrode layer;

a semiconductor layer over the gate insulating film;

a source electrode layer electrically connected to the semiconductor layer;

a drain electrode layer electrically connected to the semiconductor layer; and

a carbide layer containing hydrogen in contact with the semiconductor layer, the source electrode layer, and the drain electrode layer.

11. The semiconductor device according to claim 10, further comprising a first layer and a second layer,

wherein the first layer is interposed between the semiconductor layer and the source electrode layer,

wherein a contact resistance of between the first layer and the source electrode layer is lower than that of between the semiconductor layer and the source electrode layer,

wherein the second layer is interposed between the semiconductor layer and the drain electrode layer, and

wherein a contact resistance of between the second layer and the drain electrode layer is lower than that of between the semiconductor layer and the drain electrode layer.

12. The semiconductor device according to claim 10, further comprising a first layer and a second layer,

wherein the first layer is interposed between the semiconductor layer and the source electrode layer,

wherein a resistance of the first layer is lower than that of the semiconductor layer,

wherein the second layer is interposed between the semiconductor layer and the drain electrode layer, and

wherein a resistance of second layer is lower than that of the semiconductor layer.

13. The semiconductor device according to claim 10,

wherein the carbide layer comprises a material selected from the group consisting of silicon carbide, silicon nitride carbide, germanium carbide, n-type silicon carbide, and p-type silicon carbide.

14. The semiconductor device according to claim 10,

wherein the semiconductor layer includes at least one of indium, zinc, and gallium.

15. The semiconductor device according to claim 10,

wherein the semiconductor layer, the source electrode layer, and the drain electrode layer are covered by the carbide layer.

16. The semiconductor device according to claim 10,

wherein the semiconductor layer includes an oxide semiconductor material.

17. The semiconductor device according to claim 10,

wherein the carbide layer comprises a material selected from the group consisting of silicon nitride carbide, germanium carbide, n-type silicon carbide, and p-type silicon carbide.

18. A semiconductor device comprising:

a gate electrode layer over a substrate;

a gate insulating film over the gate electrode layer;

a source electrode layer over the gate insulating film;

a drain electrode layer over the gate insulating film;

a semiconductor layer over the source electrode layer, the drain electrode layer, and the gate electrode layer;

a carbide layer containing hydrogen over and in contact with the semiconductor layer, and

wherein the gate insulating film is interposed between the gate electrode layer and the semiconductor layer.

19. The semiconductor device according to claim 18, further comprising a first layer and a second layer,

wherein the first layer is interposed between the semiconductor layer and the source electrode layer,

wherein a contact resistance of between the first layer and the source electrode layer is lower than that of between the semiconductor layer and the source electrode layer,

wherein the second layer is interposed between the semiconductor layer and the drain electrode layer, and

wherein a contact resistance of between the second layer and the drain electrode layer is lower than that of between the semiconductor layer and the drain electrode layer.

20. The semiconductor device according to claim 18, further comprising a first layer and a second layer,

wherein the first layer is interposed between the semiconductor layer and the source electrode layer,

wherein a resistance of the first layer is lower than that of the semiconductor layer,

wherein the second layer is interposed between the semiconductor layer and the drain electrode layer, and

wherein a resistance of second layer is lower than that of the semiconductor layer.

21. The semiconductor device according to claim 18,

wherein the carbide layer comprises a material selected from the group consisting of silicon carbide, silicon nitride carbide, germanium carbide, n-type silicon carbide, and p-type silicon carbide.

22. The semiconductor device according to claim 18,

wherein the semiconductor layer includes at least one of indium, zinc, and gallium.

23. The semiconductor device according to claim 18,

wherein the semiconductor layer, the source electrode layer, and the drain electrode layer are covered by the carbide layer.

24. The semiconductor device according to claim 18,

wherein the semiconductor layer includes an oxide semiconductor material.

25. The semiconductor device according to claim 18,

wherein the carbide layer comprises a material selected from the group consisting of silicon nitride carbide, germanium carbide, n-type silicon carbide, and p-type silicon carbide.