Strain-compensated infrared photodetector and photodetector array

• US 8,450,773 B1
• Filed: 07/15/2010
• Issued: 05/28/2013
• Est. Priority Date: 07/15/2010
• Status: Active Grant

• Current Assignee: National Technology & Engineering Solutions Of Sandia LLC (Honeywell International Inc.)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Kim, Jin K., Klem, John F., Cich, Michael J., Hawkins, Samuel D.
• Primary Examiner(s): Quach, Tuan N.
• Application Number:
  US12/836,769
• Time in Patent Office: 1,048 Days
• Field of Search: 257/18, 257/21, 257/22, 257/184, 257/189, 257/E31.019, 257/E31.021, 250/338.4
• US Class Current: 257/184
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: H01L 31/1844 comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
• CPC Class Codes: H01L 31/1852 comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.

Claims

1. A photodetector, comprising:

a semiconductor substrate;

a plurality of III-V compound semiconductor layers epitaxially grown on the semiconductor substrate including;

a plurality of indium arsenide antimonide (InAsSb) light-absorbing layers located above the semiconductor substrate;

a plurality of tensile-strained layers interspersed between the plurality of InAsSb light-absorbing layers, the plurality of tensile-strained layers comprising layers of indium arsenide (InAs) or indium gallium arsenide (InGaAs);

a barrier layer located above the plurality of InAsSb light-absorbing layers;

an contact layer located above the barrier layer;

a first electrode electrically connected to the plurality of InAsSb light-absorbing layers; and

a second electrode electrically connected to the contact layer.

2. The photodetector of claim 1 wherein the InAsSb light-absorbing layers are stacked in an alternating arrangement with the tensile-strained layers, with at least one of the tensile-strained layers being located between each pair of the InAsSb light-absorbing layers.

3. The photodetector of claim 1 wherein the plurality of tensile-strained layers further comprise layers of gallium arsenide (GaAs).

4. The photodetector of claim 3 wherein the GaAs layers are alternated with the InAs layers, with one of the InAsSb light-absorbing layers being located between each adjacent pair of the GaAs and InAs layers.

5. The photodetector of claim 3 wherein the plurality of tensile-strained layers are composite layers, with each composite layer being formed from at least one of the GaAs layers and at least one of the InAs layers.

6. The photodetector of claim 5 wherein the at least one GaAs layer and the at least one InAs layer are stacked in an alternating arrangement.

7. The photodetector of claim 5 wherein each GaAs layer is sandwiched between a pair of the InAs layers.

8. The photodetector of claim 1 wherein each InAsSb light-absorbing layer comprises InAs_XSb_1-X with 0<

X≦

0.9.

9. The photodetector of claim 8 wherein each InAsSb light-absorbing layer has a layer thickness of about 100 nanometers or less.

10. The photodetector of claim 1 wherein each tensile-strained layer has a layer thickness of 50 nanometers or less.

11. The photodetector of claim 1 wherein a long cutoff wavelength for the detection of light is in a range of 4.5 to 10 microns at a temperature of 160°

K or less.

12. The photodetector of claim 1 wherein the barrier layer has a semiconductor alloy composition AlAs_xSb_1-x with x being selected to provide a valence band energy which is substantially equal to the valence band energy of the plurality of InAsSb light-absorbing layers.

13. The photodetector of claim 1 wherein the barrier layer comprises aluminum gallium arsenide antimonide (AlGaAsSb).

14. The photodetector of claim 13 wherein the AlGaAsSb barrier layer has a semiconductor alloy composition Al_yGa_1-yAs_xSb_1-x with 0.5≦

y≦

1 and with 0≦

x≦

0.2.

15. The photodetector of claim 1 wherein the plurality of InAsSb light-absorbing layers comprises 10 to 2000 InAsSb light-absorbing layers.

16. The photodetector of claim 1 wherein the plurality of InAsSb light-absorbing layers and the plurality of tensile-strained layers have a total thickness in the range of 1-10 microns.

17. The photodetector of claim 1 wherein each InAsSb light-absorbing layer is compressively strained.

18. The photodetector of claim 1 wherein a portion of the contact layer is etched down to the barrier layer to define a lateral extent of the photodetector.

19. The photodetector of claim 1 wherein the semiconductor substrate comprises a gallium antimonide (GaSb) substrate.

20. A photodetector, comprising:

a semiconductor substrate;

a light-absorbing region located above the semiconductor substrate, with the light-absorbing region comprising a plurality of layers of indium arsenide antimonide (InAsSb), gallium arsenide (GaAs) and indium arsenide (InAs);

a barrier layer located above the light-absorbing region;

a contact layer located above the barrier layer;

a first electrode electrically connected to the light-absorbing region; and

a second electrode electrically connected to the contact layer.

21. The photodetector of claim 20 wherein each InAsSb light-absorbing layer comprises InAs_XSb_1-X with 0<

x≦

0.9.

22. The photodetector of claim 20 wherein each GaAs layer has a thickness which is less than or equal to one-fifth of the thickness of an adjacent InAsSb layer.

23. The photodetector of claim 20 wherein the light-absorbing region has a total thickness in the range of 1-10 microns.

24. The photodetector of claim 20 wherein a long cutoff wavelength for the detection of light is in the range of 4.5 to 10 microns at a temperature of 160°

K or less.

25. The photodetector of claim 20 wherein the light-absorbing region comprises 10 to 2000 InAsSb layers.

26. The photodetector of claim 20 wherein each InAs layer is sandwiched between one of the GaAs layers and one of the InAsSb layers.

27. The photodetector of claim 20 wherein each InAs layer is sandwiched between a pair of the InAsSb layers.

28. The photodetector of claim 20 wherein the barrier layer comprises aluminum arsenide antimonide (AlAsSb).

29. The photodetector of claim 20 wherein the barrier layer comprises aluminum gallium arsenide antimonide (AlGaAsSb).

30. The photodetector of claim 20 wherein the contact layer comprises a III-V compound semiconductor material selected from the group consisting of indium arsenide (InAs), gallium antimonide (GaSb) and indium arsenide antimonide (InAsSb).

31. The photodetector of claim 20 wherein the semiconductor substrate is selected from the group consisting of a gallium antimonide (GaSb) substrate, a gallium arsenide (GaAs) substrate, and a silicon substrate.

32. A photodetector, comprising:

a semiconductor substrate;

a light-absorbing region located above the semiconductor substrate, with the light-absorbing region comprising a plurality of alternating layers of indium arsenide antimonide (InAsSb) and indium gallium arsenide (InGaAs);

a barrier layer located above the light-absorbing region;

a contact layer located above the barrier layer;

a first electrode electrically connected to the light-absorbing region; and

a second electrode electrically connected to the contact layer.

33. The photodetector of claim 32 wherein each InAsSb light-absorbing layer comprises InAs_XSb_1-X with 0<

x≦

0.9.

34. The photodetector of claim 32 wherein each InGaAs layer has a thickness which is less than or equal to one-fifth of the thickness of an adjacent InAsSb layer.

35. The photodetector of claim 32 wherein the light-absorbing region has a total thickness in the range of 1-10 microns.

36. The photodetector of claim 32 wherein a long cutoff wavelength for the detection of light is in the range of 4.5 to 10 microns at a temperature of 160°

K or less.

37. The photodetector of claim 32 wherein the light-absorbing region comprises 10 to 2000 pairs of alternating layers of InAsSb and InGaAs.

38. The photodetector of claim 32 wherein the barrier layer comprises aluminum arsenide antimonide (AlAsSb) or aluminum gallium arsenide antimonide (AlGaAsSb).

39. The photodetector of claim 32 wherein the contact layer is selected from the group consisting of an indium arsenide (InAs) contact layer, a gallium antimonide (GaSb) contact layer, and an indium arsenide antimonide (InAsSb) contact layer.

40. The photodetector of claim 32 wherein the semiconductor substrate is selected from the group consisting of a gallium antimonide (GaSb) substrate, a gallium arsenide (GaAs) substrate, and a silicon substrate.