MOS device with varying contact trench lengths
First Claim
1. A semiconductor device formed on a semiconductor substrate, comprising:
- an epitaxial layer overlaying the semiconductor substrate;
a drain formed on back of the semiconductor substrate;
a drain region that extends into the epitaxial layer; and
a body disposed in the epitaxial layer, having a body top surface and a body bottom surface;
a source embedded in the body, extending from the body top surface into the body;
a first gate trench extending into the epitaxial layer;
a first gate disposed in the first gate trench;
an active region contact trench extending through the source and at least part of the body into the drain region;
an active region contact electrode disposed within the active region contact trench;
a second gate trench extending into the epitaxial layer;
a second gate disposed in the second gate trench;
a gate contact trench formed within the second gate; and
a gate contact electrode disposed within the gate contact trench.
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Accused Products
Abstract
A semiconductor device is formed on a semiconductor substrate. The device comprises a drain; an epitaxial layer overlaying the drain; a body disposed in the epitaxial layer, having a body top surface and a body bottom surface; a source embedded in the body, extending from the body top surface into the body; a first gate trench extending into the epitaxial layer; a first gate disposed in the first gate trench; an active region contact trench extending through the source and at least part of the body into the drain; an active region contact electrode disposed within the active region contact trench; a second gate trench extending into the epitaxial layer; a second gate disposed in the gate trench; a gate contact trench formed within the second gate; and a gate contact electrode disposed within the gate contact trench.
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Citations
9 Claims
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1. A semiconductor device formed on a semiconductor substrate, comprising:
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an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; and a body disposed in the epitaxial layer, having a body top surface and a body bottom surface; a source embedded in the body, extending from the body top surface into the body; a first gate trench extending into the epitaxial layer; a first gate disposed in the first gate trench; an active region contact trench extending through the source and at least part of the body into the drain region; an active region contact electrode disposed within the active region contact trench; a second gate trench extending into the epitaxial layer; a second gate disposed in the second gate trench; a gate contact trench formed within the second gate; and a gate contact electrode disposed within the gate contact trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification