Semiconductor device and method of manufacturing the semiconductor device
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate of a first conductivity type;
a buried layer of a second conductivity type on the semiconductor substrate;
an epitaxial layer of the second conductivity type on the buried layer and having a shallow trench region in a surface thereof;
a first diffusion layer region of the first conductivity type in the epitaxial layer of the second conductivity type;
a deep trench region extending from the first diffusion layer region in the epitaxial layer;
a gate insulating film on an inner wall of the deep trench region;
a gate electrode comprising polysilicon in the deep trench region and in contact with the gate insulating film;
a source region of the second conductivity type in a surface of the first diffusion layer region; and
a heavily doped diffusion layer of the first conductivity type in the surface of the first diffusion layer region,wherein the first diffusion layer region is shaped so as to include a second diffusion layer region at a bottom portion thereof and at a position spaced away from the deep trench region, the second diffusion layer region extending in the epitaxial layer below the shallow trench region, andwherein the buried layer comprises a heavily doped drain, the epitaxial layer comprises a lightly doped drain, the first diffusion layer region comprise a body region, and the heavily doped diffusion layer comprises a body contact region.
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Abstract
To realize forming a trench MOSFET in which a depth of a P-body is changed on the same surface as a CMOS by employing steps with good controllability and without greatly increasing the number of manufacturing steps, provided is a trench MOSFET including an extended body region (10), which is a part of a P-body region (4) and is provided in a vicinity of a deep trench (5) with a distance, the extended body region (10) being diffused deeper than the P-body region (4).
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2 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate of a first conductivity type; a buried layer of a second conductivity type on the semiconductor substrate; an epitaxial layer of the second conductivity type on the buried layer and having a shallow trench region in a surface thereof; a first diffusion layer region of the first conductivity type in the epitaxial layer of the second conductivity type; a deep trench region extending from the first diffusion layer region in the epitaxial layer; a gate insulating film on an inner wall of the deep trench region; a gate electrode comprising polysilicon in the deep trench region and in contact with the gate insulating film; a source region of the second conductivity type in a surface of the first diffusion layer region; and a heavily doped diffusion layer of the first conductivity type in the surface of the first diffusion layer region, wherein the first diffusion layer region is shaped so as to include a second diffusion layer region at a bottom portion thereof and at a position spaced away from the deep trench region, the second diffusion layer region extending in the epitaxial layer below the shallow trench region, and wherein the buried layer comprises a heavily doped drain, the epitaxial layer comprises a lightly doped drain, the first diffusion layer region comprise a body region, and the heavily doped diffusion layer comprises a body contact region. - View Dependent Claims (2)
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Specification