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Semiconductor device and method of manufacturing the semiconductor device

  • US 8,450,797 B2
  • Filed: 09/06/2011
  • Issued: 05/28/2013
  • Est. Priority Date: 09/24/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate of a first conductivity type;

    a buried layer of a second conductivity type on the semiconductor substrate;

    an epitaxial layer of the second conductivity type on the buried layer and having a shallow trench region in a surface thereof;

    a first diffusion layer region of the first conductivity type in the epitaxial layer of the second conductivity type;

    a deep trench region extending from the first diffusion layer region in the epitaxial layer;

    a gate insulating film on an inner wall of the deep trench region;

    a gate electrode comprising polysilicon in the deep trench region and in contact with the gate insulating film;

    a source region of the second conductivity type in a surface of the first diffusion layer region; and

    a heavily doped diffusion layer of the first conductivity type in the surface of the first diffusion layer region,wherein the first diffusion layer region is shaped so as to include a second diffusion layer region at a bottom portion thereof and at a position spaced away from the deep trench region, the second diffusion layer region extending in the epitaxial layer below the shallow trench region, andwherein the buried layer comprises a heavily doped drain, the epitaxial layer comprises a lightly doped drain, the first diffusion layer region comprise a body region, and the heavily doped diffusion layer comprises a body contact region.

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