Semiconductor structure with a planar Schottky contact
First Claim
1. A semiconductor structure, comprising:
- a field effect transistor (FET) trench in a FET region of a semiconductor layer, the FET trench having a FET conductive electrode therein, the FET conductive electrode having a top surface recessed relative to a top surface of a source region associated with the FET trench in the FET region; and
a Schottky trench in a Schottky region of the semiconductor layer, the Schottky trench having a Schottky conductive electrode therein, the Schottky conductive electrode in the Schottky trench having a top surface substantially coplanar with a top surface of a mesa region in the Schottky region, the top surface of the mesa region forming at least a portion of a Schottky contact, the top surface of the source region of the FET region being higher than the top surface of the mesa region of the Schottky region.
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Accused Products
Abstract
A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench. An interconnect layer electrically contacts the top surface of the semiconductor layer adjacent the trench so as to form a Schottky contact with the top surface of the semiconductor layer adjacent the trench. A surface of the semiconductor layer in the Schottky region is lower relative to a surface of the semiconductor layer in the FET region.
12 Citations
22 Claims
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1. A semiconductor structure, comprising:
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a field effect transistor (FET) trench in a FET region of a semiconductor layer, the FET trench having a FET conductive electrode therein, the FET conductive electrode having a top surface recessed relative to a top surface of a source region associated with the FET trench in the FET region; and a Schottky trench in a Schottky region of the semiconductor layer, the Schottky trench having a Schottky conductive electrode therein, the Schottky conductive electrode in the Schottky trench having a top surface substantially coplanar with a top surface of a mesa region in the Schottky region, the top surface of the mesa region forming at least a portion of a Schottky contact, the top surface of the source region of the FET region being higher than the top surface of the mesa region of the Schottky region. - View Dependent Claims (2, 3, 4, 5, 13, 14, 15)
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6. A trench MOS barrier Schottky (TMBS) rectifier, comprising:
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a trench extending into a semiconductor layer, a dielectric layer lining a sidewall of the trench; a conductive electrode having a top surface coplanar with a top surface of the semiconductor layer adjacent the trench; and an interconnect layer including a conformal barrier metal layer which contacts the top surface of the semiconductor layer so as to form a Schottky contact with the top surface of the semiconductor layer, the conformal barrier layer extending over and directly contacting at least a portion of the conductive electrode. - View Dependent Claims (7, 8, 9, 10, 16, 17, 18, 19)
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11. A trench MOS barrier Schottky (TMBS) rectifier comprising:
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a trench extending into a semiconductor layer; a dielectric layer lining a sidewall of the trench; a conductive electrode having a top surface that is coplanar with a top surface of the semiconductor layer adjacent the trench; and an interconnect layer comprising a conformal barrier metal layer contacting the top surface of the semiconductor layer so as to form a Schottky contact with the top surface of the semiconductor layer, the conformal barrier layer extending over and directly contacting the conductive electrode, a top surface of the conductive electrode being substantially coplanar with a top surface of the semiconductor layer such that the conformal barrier metal layer is substantially planar. - View Dependent Claims (12, 20, 21, 22)
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Specification