Reverse leakage reduction and vertical height shrinking of diode with halo doping
First Claim
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1. A semiconductor diode device, comprising:
- a first conductivity type region;
a second conductivity type region, wherein the second conductivity type is different from the first conductivity type;
an intrinsic region located between the first conductivity type region and the second conductivity type region;
a first halo region of the first conductivity type located between the second conductivity type region and the intrinsic region, the first halo region directly contacting the second conductivity region;
wherein the first conductivity type region and the second conductivity type region of the diode device have a thickness ranging from 5 angstroms to 1 micron;
wherein the first halo region has a thickness ranging from 10 angstroms to 3 microns,wherein the semiconductor diode device is a two terminal device,wherein the first conductivity type region, second conductivity type region, intrinsic region and first halo region have a cylindrical shape, andwherein a doping concentration of the first conductivity type region and doping concentration of second conductivity type region are higher than 1×
1019 cm−
3 and a doping concentration of the first halo region is higher than 1×
1017 cm−
3 and lower than 1×
1019 cm−
3.
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Abstract
One embodiment of the invention provides a semiconductor diode device including a first conductivity type region, a second conductivity type region, where the second conductivity type is different from the first conductivity type, an intrinsic region located between the first conductivity type region and the second conductivity type region; a first halo region of the first conductivity type located between the second conductivity type region and the intrinsic region, and optionally a second halo region of the second conductivity type located between the first conductivity type region and the intrinsic region.
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Citations
12 Claims
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1. A semiconductor diode device, comprising:
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a first conductivity type region; a second conductivity type region, wherein the second conductivity type is different from the first conductivity type; an intrinsic region located between the first conductivity type region and the second conductivity type region; a first halo region of the first conductivity type located between the second conductivity type region and the intrinsic region, the first halo region directly contacting the second conductivity region; wherein the first conductivity type region and the second conductivity type region of the diode device have a thickness ranging from 5 angstroms to 1 micron; wherein the first halo region has a thickness ranging from 10 angstroms to 3 microns, wherein the semiconductor diode device is a two terminal device, wherein the first conductivity type region, second conductivity type region, intrinsic region and first halo region have a cylindrical shape, and wherein a doping concentration of the first conductivity type region and doping concentration of second conductivity type region are higher than 1×
1019 cm−
3 and a doping concentration of the first halo region is higher than 1×
1017 cm−
3 and lower than 1×
1019 cm−
3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification