Micromachined ultrasonic transducer having compliant post structure
First Claim
1. A compression post capacitive micromachined ultrasonic transducer (CMUT), comprising:
- a. a first electrodeb. a top conductive layer, wherein said top conductive layer comprises a pattern of post holes there through, wherein said top conductive layer comprises a device layer of a silicon on insulator (SOI) wafer, wherein said post holes terminate at a buried oxide layer in said SOI wafer, wherein said buried oxide layer is disposed on a handle of said SOI;
c. a moveable mass disposed above a top surface of said top conductive layer, wherein said moveable mass comprises said first electrode;
d. an operating gap, wherein said operating gap is disposed between said top surface of said top conductive layer and a bottom surface of said moveable mass;
e. a pattern of compression posts, wherein a proximal end said compression post is connected perpendicularly to a bottom surface of said moveable mass, wherein said pattern of compression posts span through said pattern of post holes; and
f. a second electrode, wherein said top conductive layer comprises said second electrode, wherein said first electrode is electronically insulated from said second electrode, wherein said pattern of compression posts compress on said buried oxide layer without bending to provide a restoring force in a direction that is normal to said bottom surface of said moveable mass.
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Accused Products
Abstract
A compression post capacitive micromachined ultrasonic transducer (CMUT) is provided. The compression post CMUT includes a first electrode, a top conductive layer having a pattern of post holes, a moveable mass that includes the first electrode. The compression post CMUT further includes an operating gap disposed between the top surface of the top conductive layer and a bottom surface of the moveable mass, a pattern of compression posts, where a proximal end the compression post is connected perpendicularly to a bottom surface of the moveable mass, where the pattern of compression posts span through the pattern of post holes. The top conductive layer includes the second electrode that is electronically insulated from the first electrode, where the pattern of compression posts compress to provide a restoring force in a direction that is normal to the bottom surface of the moveable mass.
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Citations
20 Claims
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1. A compression post capacitive micromachined ultrasonic transducer (CMUT), comprising:
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a. a first electrode b. a top conductive layer, wherein said top conductive layer comprises a pattern of post holes there through, wherein said top conductive layer comprises a device layer of a silicon on insulator (SOI) wafer, wherein said post holes terminate at a buried oxide layer in said SOI wafer, wherein said buried oxide layer is disposed on a handle of said SOI; c. a moveable mass disposed above a top surface of said top conductive layer, wherein said moveable mass comprises said first electrode; d. an operating gap, wherein said operating gap is disposed between said top surface of said top conductive layer and a bottom surface of said moveable mass; e. a pattern of compression posts, wherein a proximal end said compression post is connected perpendicularly to a bottom surface of said moveable mass, wherein said pattern of compression posts span through said pattern of post holes; and f. a second electrode, wherein said top conductive layer comprises said second electrode, wherein said first electrode is electronically insulated from said second electrode, wherein said pattern of compression posts compress on said buried oxide layer without bending to provide a restoring force in a direction that is normal to said bottom surface of said moveable mass. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification