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Vertical cavity surface emitting laser having strain reduced quantum wells

  • US 8,451,875 B2
  • Filed: 10/31/2006
  • Issued: 05/28/2013
  • Est. Priority Date: 10/01/2004
  • Status: Active Grant
First Claim
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1. A VCSEL comprising:

  • a substrate;

    an essentially undoped bottom DBR mirror disposed on the substrate;

    a periodically doped first conduction layer region of a first conductivity type, the first conduction layer region coupled to the bottom DBR mirror and having a heavily doped layer at a location where the optical electric field is at about a minimum;

    an active layer region disposed on the first conduction layer region that contains one or more migration enhanced epitaxy layer regions before and between N-containing quantum wells each migration enhanced epitaxy layer region having at least one flattened layer under on a substrate side of a N-containing layer of the migration enhanced epitaxy layer region or a substrate side of the N-containing quantum well, wherein the quantum wells are InGaAsN quantum wells with Sb, wherein the nitrogen concentration is about 2% and the concentration of the In is less than about 28% and In and Sb together is less than or equal to about 28%;

    a periodically doped second conduction layer region of a second conductivity type, the doped second conduction layer region coupled to the active layer region and having a heavily doped layer at a location where the optical electric field is at about a minimum;

    a ramp layer region positioned between the periodically doped second donduction layer region and an aperture, the ramp layer region including a ramp of aluminum in a composition of the ramp layer region; and

    a top mirror coupled to the second conduction layer region, wherein;

    the aperture being above the quantum wells and below the periodically doped second conduction layer region and being defined by an oxidized AlGaAs layer;

    the top mirror is essentially undoped and includes a plurality of layers of AlGaAs having an aluminum content in a range from 70% to 100%; and

    a protective oxide layer surrounding the top mirror to protect at least a portion of the top mirror from being oxidized during a wet oxidation step,wherein the heavily doped layer of the periodically doped second conduction layer region, the ramp layer region, and the oxidized AlGaAs layer are within a single null of a standing wave of the VCSEL.

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