Multi-station sequential curing of dielectric films

• US 8,454,750 B1
• Filed: 03/20/2007
• Issued: 06/04/2013
• Est. Priority Date: 04/26/2005
• Status: Active Grant

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Shrinivasan, Krishnan, Rivkin, Michael, Smargiassi, Eugene, Sabri, Mohamed
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US11/688,695
• Time in Patent Office: 2,268 Days
• Field of Search: 118/719, 156/345.31, 156/345.54
• US Class Current: 118/719
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/68764 characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate

Abstract

The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Claims

1. A chamber for processing semiconductor wafers, comprising:

a plurality of processing stations, each processing station having a wafer support, a radiation source, and a window disposed between the wafer support and the radiation source; and

a mechanism to transfer a wafer to each processing station, wherein the stations are configured to;

expose a wafer supported by the wafer support to radiation from the radiation source, and

provide wafer exposure characteristics that vary radiation wavelength for at least two of the plurality of stations.

2. The chamber of claim 1, wherein each radiation source comprises

a) one or more light generators,

b) one or more optical components operable to modify one or more characteristics of radiant output of the light generators.

3. The chamber of claim 2, wherein the one or more light generators are operable to generate light having a wavelength or wavelengths between 150 nm and 500 nm.

4. The chamber of claim 2, wherein the one or more light generators are selected from the group consisting of mercury-vapor lamps, doped mercury-vapor lamps, electrode lamps, excimer lamps, excimer lasers, pulsed Xenon lamps, doped Xenon lamps, and combinations thereof.

5. The chamber of claim 2, wherein the one or more optical components are selected from the group consisting of one or more reflectors, one or more filters, or a combination thereof.

6. The chamber of claim 5 wherein at least one of the one or more reflectors is selected to reflect only radiation of a desired wavelength range.

7. The chamber of claim 5, wherein at least one of the one or more filters is a bandpass filter selected to transmit only radiation of a desired wavelength range.

8. The chamber of claim 5, wherein the one or more filters comprises a quartz window.

9. The chamber of claim 8, wherein the purity of the quartz window is selected to filter out radiation within a wavelength range from passing through the window and transmit radiation outside of the wavelength range through the window.

10. The chamber of claim 5, wherein the filter is a long pass filter selected to filter out radiation with a wavelength below a cutoff wavelength.

11. The chamber of claim 1 further comprising a mechanism for controlling the temperature of the wafer independent of the intensity of the radiation.

12. The chamber of claim 11, wherein the mechanism is a temperature-controlled wafer support.

13. The chamber of claim 12, wherein the wafer support is heated.

14. The chamber of claim 12, wherein the wafer support is cooled.

15. The chamber of claim 1, wherein the radiation source in each processing station is centered with respect to the perimeter of the wafer support.

16. The chamber of claim 1, wherein each of the plurality of processing stations further comprises a reflector disposed over the radiation source, and wherein the radiation source and the reflector are disposed within the processing station such that a wafer supported by the wafer support and centered with respect to the perimeter of the wafer support is exposed to substantially uniform radiation from the radiation source across the wafer surface.

19. The chamber of claim 1, wherein the mechanism is configured to transfer the wafer to each processing station by at least rotating about a rotational axis and keeping the wafer a fixed distance from the rotational axis during the rotation and from station to station.

20. The chamber of claim 19, wherein the mechanism is a carousel.

21. The chamber of claim 1, wherein the chamber is configured to simultaneously expose wafers supported by the wafer supports to radiation.

22. The chamber of claim 1, wherein radiation sources are each configured to expose the same side of the wafer to radiation.

17. A chamber for processing semiconductor wafers, comprising:

a plurality of processing stations, each processing station having a wafer support, a radiation source, and a mechanism configured to transfer wafers to and from each station;

wherein each processing stations is configured to expose a wafer supported by the wafer support of the processing station to radiation from the radiation source of the processing station and provide wafer exposure characteristics that vary in radiation wavelength between at least two of the processing stations;

and wherein the radiation source is disposed within the processing station such that the wafer supported by the wafer support, when centered with respect to the perimeter of the wafer support, is exposed to substantially uniform radiation across a surface of the wafer.

18. A chamber for processing semiconductor wafers, comprising:

a first station comprising a first wafer support, a first radiation source, and a first window disposed between the first wafer support and the first radiation source;

wherein the first radiation source and the first window are configured to expose a wafer on the first wafer support to radiation at a first intensity;

a second station comprising a second wafer support, a second radiation source, and a second window disposed between the second wafer support and the second radiation source;

wherein the second radiation source and the second window is operable to expose a wafer on the second wafer support to radiation at a second intensity;

wherein the second intensity is between about 50%-90% of the first intensity; and

a mechanism to transfer a wafer to each station.