Method of producing gas barrier layer, gas barrier film for solar batteries and gas barrier film for displays

• US 8,455,059 B2
• Filed: 03/17/2010
• Issued: 06/04/2013
• Est. Priority Date: 03/17/2009
• Status: Expired due to Fees

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Tonohara, Kouji, Takahashi, Shinsuke, Takahashi, Toshiya
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US12/725,577
• Publication Number:
  US 20100239482A1
• Time in Patent Office: 1,175 Days
• Field of Search: 427/577, 427/578, 427/579
• US Class Current: 427/577
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/545 for coating elongated substrates
• CPC Class Codes: H05B 33/04 Sealing arrangements , e.g. against humidity
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Abstract

A method according to the invention comprises: starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge.

Claims

1. A method of producing a gas barrier layer made of silicon nitride, silicon carbide or silicon carbonitride by plasma-enhanced CVD, comprising:

supplying a material of the gas barrier layer to a film deposition chamber;

adjusting the film deposition chamber to a predetermined pressure and traveling an elongated flexible film along a predetermined travel path through the film deposition chamber;

starting plasma discharge for forming the gas barrier layer in the film deposition chamber; and

producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge on a surface of the elongated flexible film traveling along the predetermined travel path,

wherein the elongated flexible film has a film base portion to serve as a product and a guide base portion connected to an advancing end side of the film base portion, the guide base portion not serving as a product,

wherein the plasma discharge for forming the gas barrier layer is started before a boundary between the film base portion and the guide base portion reaches the film deposition chamber, and

wherein a point in time when a second predetermined period of time elapsed from entry of the boundary between the film base portion and the guide base portion into the film deposition chamber is regarded as a point in time when the first predetermined period of time has elapsed from the start of the plasma discharge for forming the gas barrier layer.

2. The method according to claim 1, wherein a marking is made at a specified portion of at least one of the flexible film and the formed gas barrier layer after the first predetermined period of time has elapsed from the start of the plasma discharge.

3. The method according to claim 1, wherein a marking is made by putting a mark which can be visually confirmed.

4. The method according to claim 1, wherein the guide base portion is made of a material which is identical to that of the film base portion.

5. The method according to claim 1, wherein the flexible film comprises a base body and a layer structure formed on the base body including at least one layer, the gas barrier layer being formed on the surface of the layer structure.

6. The method according to claim 1, wherein the flexible film comprises a base body and a layer structure formed on the base body, a first said gas barrier layer being formed on the surface of the layer structure, the layer structure comprising a second gas barrier layer.

7. The method according to claim 1, wherein at least a part of the surface of the flexible film is formed with an organic material.

8. The method according to claim 1, wherein the gas barrier layer is formed with a temperature of the flexible film kept at 120°

C. or less.

9. The method according to claim 1, wherein the gas barrier layer is formed at a static film deposition rate of at least 300 nm/min.

10. The method according to claim 1, wherein the first predetermined period of time is 3 seconds or more.

11. The method according to claim 1, comprising:

starting the plasma discharge with a shutter for preventing formation of the gas barrier layer on the flexible film closed; and

opening the shutter after the first predetermined period of time has elapsed from the start of the plasma discharge to form the gas barrier layer.

12. The method according to claim 11, wherein the shutter is made of a material which is identical to that of the flexible film.

13. The method according to claim 11, wherein the shutter is made of a dielectric material.

14. The method according to claim 1, wherein gas materials including at least one of silane gas and disilane and at least one gas selected from the group consisting of ammonia gas, hydrazine and nitrogen gas are used for the material of the gas barrier layer.

15. The method according to claim 14, wherein at least one gas selected from the group consisting of nitrogen gas, hydrogen gas, helium, neon, argon, krypton, xenon and radon is used for the material of the gas barrier layer in combination with the gas materials.

16. The method according to claim 1, wherein liquid materials including at least one of hexamethyldisilazane (HMDSN) and tetramethylsilane (TMS) are used for the material of the gas barrier layer.