Surface gratings on VCSELS for polarization pinning

• US 8,455,279 B2
• Filed: 08/15/2011
• Issued: 06/04/2013
• Est. Priority Date: 04/20/2005
• Status: Active Grant

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Johnson, Ralph H., Guenter, James K.
• Primary Examiner(s): PHAM, THANHHA S
• Application Number:
  US13/210,306
• Publication Number:
  US 20110306156A1
• Time in Patent Office: 659 Days
• Field of Search: 438/31, 438/32, 438/39, 438/29, 438/69, 438/72, 257/E21.089
• US Class Current: 438/32
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18319 comprising a periodical structure in lateral directions
• CPC Class Codes: H01S 5/18355 having a defined polarisation
• CPC Class Codes: H01S 5/18386 Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface

Abstract

Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on the upper mirror; and etching a grating into the grating layer.

Claims

1. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), the method comprising:

growing a lower mirror on a substrate;

growing an active region on the lower mirror, the active region having one or more quantum wells configured to generate light by stimulated emission;

growing an upper mirror on the active region;

forming an electrical aperture in or near the active region;

positioning a light transmissive grating layer on the upper mirror and above the electrical aperture, the light transmissive grating layer including a low index of refraction layer on the upper mirror and a high index of refraction layer on the low index of refraction layer, the high index of refraction layer having an index of refraction that is at least about 0.3 greater than the index of refraction of the low index of refraction layer; and

forming a grating that extends at least partially into the high index of refraction layer, the grating configured to pin polarization of light emitted from the active region.

2. The method of claim 1, wherein forming the electrical aperture includes:

forming an oxide layer in the active region;

etching a trench through the upper mirror to the oxide layer; and

exposing at least a portion of the oxide layer such that the exposed portion of the oxide layer oxidizes thereby creating the electrical aperture.

3. The method of claim 1, wherein the grating is etched into the high index of refraction layer.

4. The method of claim 3, wherein the low index of refraction layer acts as a stop-etch when etching the grating into the high index of refraction layer.

5. The method of claim 1, wherein the grating extends at least partially into both the high index of refraction layer and the low index of refraction layer.

6. The method of claim 1, wherein the high index of refraction layer includes at least one of Si or Si₃N₄.

7. The method of claim 6, wherein the high index of refraction layer includes an about 100 nm thick layer of Si₃N₄.

8. The method of claim 1, wherein the low index of refraction layer includes SiO₂.

9. The method of claim 8, wherein the high index of refraction layer comprises an about 70 nm thick layer of SiO₂.

10. The method of claim 1, wherein the high index of refraction layer has a wave optical thickness of between about 0.15 and about 0.5.

11. The method of claim 1, wherein the low index of refraction layer has a wave optical thickness of between about 0.04 and about 0.18.

12. The method of claim 1, wherein the grating includes a plurality of protrusions, the period between each protrusion being between about 1 micron and about 2 microns.

13. The method of claim 12, wherein the width of each protrusion being between about 10% and about 60% of the period of the protrusions.

14. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), the method comprising:

growing a lower mirror on a substrate;

growing an active region on the lower mirror, the active region having one or more quantum wells configured to generate light by stimulated emission;

growing an upper mirror on the active region;

forming an electrical aperture in or near the active region;

depositing a light transmissive grating layer on the upper mirror and above the electrical aperture; and

etching a grating into the grating layer, the grating layer being configured to pin polarization of light emitted from the active region, the grating including a plurality of protrusions, each protrusion having a period of between about 1 micron and about 2 microns, the width of each protrusion being between 10% and 60% of the period of the protrusions.

15. The method of claim 14, wherein the light transmissive grating layer includes:

a low index of refraction layer on the upper mirror; and

a high index of refraction layer on the low index of refraction layer, the high index of refraction layer having an index of refraction that at least about 0.3 greater than the index of refraction of the low index of refraction layer.

16. The method of claim 15, wherein the low index of refraction layer acts as a stop-etch when etching the grating into the high index of refraction layer.

17. The method of claim 16, wherein the grating is etched into both the high index of refraction layer and the low index of refraction layer.

18. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), the method comprising:

growing a lower mirror on a substrate;

growing an active region on the lower mirror, the active region having one or more quantum wells configured to generate light by stimulated emission;

forming an oxide layer in or near the active region;

growing an upper mirror on the active region;

etching a trench through the upper mirror to the oxide layer;

exposing at least a portion of the oxide layer such that the exposed portion of the oxide layer oxidizes to create an electrical aperture;

depositing a low index of refraction layer on the upper mirror;

depositing a high index of refraction layer on the low index of refraction layer, the high index of refraction layer having an index of refraction that at least 0.3 greater than the index of refraction for the low index of refraction layer; and

etching a grating above the electrical aperture, the grating extending at least partially into the high index of refraction layer, the grating configured to pin polarization of light emitted from the active region.