×

Methods of forming features of integrated circuitry

  • US 8,455,341 B2
  • Filed: 09/02/2010
  • Issued: 06/04/2013
  • Est. Priority Date: 09/02/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming features of integrated circuitry, comprising:

  • forming an initial pitch multiplied feature pattern extending from a target area into only one of a first or second periphery area received on opposing sides of the target area;

    after forming the initial pitch multiplied feature pattern, forming a subsequent feature pattern extending from the target area into the other of the first or second periphery area; and

    using the initial and subsequent feature patterns in forming features in underlying material which extend from the target area to the first and second periphery areas.

View all claims
  • 8 Assignments
Timeline View
Assignment View
    ×
    ×