Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same
First Claim
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1. A nonvolatile memory device, comprising:
- a lower electrode;
an amorphous alloy metal oxide layer directly disposed on the lower electrode; and
a upper electrode disposed on the amorphous alloy metal oxide layer,wherein the amorphous alloy metal oxide layer is a memory node and formed of a variable resistance material,wherein the amorphous alloy metal oxide layer includes at least a first transition metal and a second metal having a different crystalline characteristic from the first transition metal,wherein the first transition metal is one of Ni, Ti, Hf, Zr, W, Co, and Nb, and wherein the second metal is one of Al and In.
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Abstract
A nonvolatile memory device may include a lower electrode, an oxide layer including an amorphous alloy metal oxide disposed on the lower electrode, and a diode structure disposed on the oxide layer.
7 Citations
10 Claims
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1. A nonvolatile memory device, comprising:
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a lower electrode; an amorphous alloy metal oxide layer directly disposed on the lower electrode; and a upper electrode disposed on the amorphous alloy metal oxide layer, wherein the amorphous alloy metal oxide layer is a memory node and formed of a variable resistance material, wherein the amorphous alloy metal oxide layer includes at least a first transition metal and a second metal having a different crystalline characteristic from the first transition metal, wherein the first transition metal is one of Ni, Ti, Hf, Zr, W, Co, and Nb, and wherein the second metal is one of Al and In. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a nonvolatile memory device, comprising:
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forming a lower electrode; forming an amorphous alloy metal oxide layer directly on the lower electrode; and forming an upper electrode on the amorphous metal alloy layer, wherein the amorphous alloy metal oxide layer is a memory node and formed of a variable resistance material, wherein the amorphous alloy metal oxide layer includes at least a first transition metal and a second metal having a different crystalline characteristic from the first transition metal, wherein the first transition metal is one of Ni, Ti, Hf, Zr, W, Co, and Nb, and wherein the second metal is one of Al and In. - View Dependent Claims (7, 8, 9, 10)
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Specification