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Semiconductor device

  • US 8,455,868 B2
  • Filed: 12/22/2010
  • Issued: 06/04/2013
  • Est. Priority Date: 12/25/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor comprising;

    a first channel formation region comprising a semiconductor material other than an oxide semiconductor;

    a pair of impurity regions provided so as to sandwich the first channel formation region;

    a first gate insulating layer over the first channel formation region;

    a first gate electrode over the first gate insulating layer; and

    a first source electrode electrically connected to one of the pair of impurity regions and a first drain electrode electrically connected to the other one of the pair of impurity regions;

    an interlayer insulating film over the first transistor,a second transistor over the interlayer insulating film, comprising;

    a second source electrode and a second drain electrode;

    a second channel formation region comprising an oxide semiconductor material, and electrically connected to the second source electrode and the second drain electrode;

    a second gate insulating layer over the second channel formation region; and

    a second gate electrode over the second gate insulating layer; and

    a capacitor over the interlayer insulating film, comprising;

    one of the second source electrode and the second drain electrode;

    the second gate insulating layer; and

    a capacitor electrode over the second gate insulating layer.

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