Semiconductor device
First Claim
1. A semiconductor device comprising:
- a first transistor comprising;
a first channel formation region comprising a semiconductor material other than an oxide semiconductor;
a pair of impurity regions provided so as to sandwich the first channel formation region;
a first gate insulating layer over the first channel formation region;
a first gate electrode over the first gate insulating layer; and
a first source electrode electrically connected to one of the pair of impurity regions and a first drain electrode electrically connected to the other one of the pair of impurity regions;
an interlayer insulating film over the first transistor,a second transistor over the interlayer insulating film, comprising;
a second source electrode and a second drain electrode;
a second channel formation region comprising an oxide semiconductor material, and electrically connected to the second source electrode and the second drain electrode;
a second gate insulating layer over the second channel formation region; and
a second gate electrode over the second gate insulating layer; and
a capacitor over the interlayer insulating film, comprising;
one of the second source electrode and the second drain electrode;
the second gate insulating layer; and
a capacitor electrode over the second gate insulating layer.
1 Assignment
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Accused Products
Abstract
An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a first transistor comprising; a first channel formation region comprising a semiconductor material other than an oxide semiconductor; a pair of impurity regions provided so as to sandwich the first channel formation region; a first gate insulating layer over the first channel formation region; a first gate electrode over the first gate insulating layer; and a first source electrode electrically connected to one of the pair of impurity regions and a first drain electrode electrically connected to the other one of the pair of impurity regions; an interlayer insulating film over the first transistor, a second transistor over the interlayer insulating film, comprising; a second source electrode and a second drain electrode; a second channel formation region comprising an oxide semiconductor material, and electrically connected to the second source electrode and the second drain electrode; a second gate insulating layer over the second channel formation region; and a second gate electrode over the second gate insulating layer; and a capacitor over the interlayer insulating film, comprising; one of the second source electrode and the second drain electrode; the second gate insulating layer; and a capacitor electrode over the second gate insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first transistor comprising; a first channel formation region comprising a semiconductor material other than an oxide semiconductor; a pair of impurity regions provided so as to sandwich the first channel formation region; a first gate insulating layer over the first channel formation region; a first gate electrode over the first gate insulating layer; and a first source electrode electrically connected to one of the pair of impurity regions and a first drain electrode electrically connected to the other one of the pair of impurity regions; an interlayer insulating film over the first transistor, a second transistor over the interlayer insulating film, comprising; a second source electrode and a second drain electrode; a second channel formation region comprising an oxide semiconductor material, and electrically connected to the second source electrode and the second drain electrode; a second gate insulating layer over the second channel formation region; and a second gate electrode over the second gate insulating layer; and a capacitor over the interlayer insulating film, comprising; one of the second source electrode and the second drain electrode; the second gate insulating layer; and a capacitor electrode over the second gate insulating layer, wherein edge portions of the second source electrode and the second drain electrode are tapered. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification