Non-radiatively pumped wavelength converter

• US 8,455,904 B2
• Filed: 04/19/2010
• Issued: 06/04/2013
• Est. Priority Date: 04/20/2009
• Status: Active Grant

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Schardt, Craig R., Leatherdale, Catherine A.
• Primary Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US13/264,833
• Publication Number:
  US 20120037885A1
• Time in Patent Office: 1,142 Days
• Field of Search: 257/13, 257/98, 257/E33.008
• US Class Current: 257/98
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.

Claims

1. A light source, comprising:

a light emitting diode (LED) structure, comprising an active layer disposed between a first doped semiconductor layer and a second doped semiconductor layer, the active layer having energy levels associated with light of a first wavelength;

a grid electrode on the first doped semiconductor layer, the grid electrode defining open regions of a surface of the first doped layer; and

a first plurality of light emitting elements positioned on the surface of the first doped semiconductor layer in the open regions, at least some of the light emitting elements being excited by non-radiative energy transfer from the active layer, the light emitting elements being capable of emitting light at a second wavelength different from the first wavelength; and

a second plurality of light emitting elements disposed over at least some of the first plurality of light emitting elements, at least some of the second plurality of light emitting elements being excited by non-radiative energy transfer from at least some of the first plurality of light emitting elements.

2. A light source, comprising:

a light emitting diode (LED) structure, comprising an active layer disposed between a first doped semiconductor layer and a second doped semiconductor layer, the active region having energy levels associated with light of a first wavelength;

a first plurality of light emitting elements positioned on at least part of a surface of the first doped semiconductor layer, at least some of the light emitting elements being excited by non-radiative energy transfer from the active layer, the light emitting elements being capable of emitting light at a second wavelength different from the first wavelength; and

a second plurality of light emitting elements disposed over at least some of the first plurality of light emitting elements, at least some of the second plurality of light emitting elements being excited by non-radiative energy transfer from at least some of the first plurality of light emitting elements, the second plurality of light emitting elements being capable of emitting light at a third wavelength different from the second wavelength.

3. A light source as recited in claim 2, wherein the active layer comprises a quantum well and at least some energy levels in the quantum well are substantially similar to energy levels within the first plurality of light emitting elements.

4. A light source as recited in claim 2, wherein the first plurality of light emitting elements comprises semiconductor quantum dot structures.

5. A light source as recited in claim 2, wherein the first plurality of light emitting elements comprises semiconductor quantum wire structures.

6. A light source as recited in claim 2, wherein the first plurality of light emitting elements comprises nano-phosphor structures.

7. A light source as recited in claim 2, wherein the first plurality of light emitting elements comprises light emitting polymers.

8. A light source as recited in claim 2, wherein at least some of the second plurality of light emitting elements are capable of emitting light at the third wavelength and others of the second plurality of light emitting elements are capable of emitting light at a fourth wavelength different from the second and third wavelengths.

9. A light source as recited in claim 2, further comprising an arrangement of independently addressable electrodes on a second side of the LED structure, the second doped semiconductor layer being positioned between the electrodes and the active layer.

10. A light source as recited in claim 9, further comprising a grid electrode defining open area of the surface of the first doped semiconductor layer, the first plurality of light emitting elements being positioned in the open areas, at least some of the independently addressable electrodes being aligned with respective open regions of the first doped layer.

11. A light source as recited in claim 2, further comprising a grid electrode defining open area of the surface of the first doped semiconductor layer, the first plurality of light emitting elements being positioned in the open areas.

12. A light source as recited in claim 11, wherein the first doped layer is formed of a first doped semiconductor material and the grid electrode is formed of the first doped semiconductor material.

13. A light source as recited in claim 11, wherein the grid electrode comprises a metal grid electrode.

14. A light source as recited in claim 11, wherein the grid electrode comprises a conducting metal oxide.

15. A light source as recited in claim 11, wherein the grid electrode comprises a semiconductor material.