Semiconductor light-emitting device with improved light extraction efficiency

• US 8,455,906 B2
• Filed: 11/01/2011
• Issued: 06/04/2013
• Est. Priority Date: 11/04/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Sun Woon, Kim, Hyun Kyung, Kim, Je Won, Choi, In Seok, Lee, Kyu Han, Oh, Jeong Tak
• Primary Examiner(s): Wilson, Allan R
• Application Number:
  US13/286,881
• Publication Number:
  US 20120043557A1
• Time in Patent Office: 581 Days
• Field of Search: 257/98, 257/623, 257/E33.067, 257/E33.068, 438/29, 438/39
• US Class Current: 257/98
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

Claims

1. A semiconductor light-emitting device, comprising:

a substrate used in growing a semiconductor crystal and made of single component;

a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate,

wherein the substrate has a side pattern contacting the first conductive clad layer and continuously formed along all edges of the upper surface thereof by selectively etching the substrate, the side pattern consisting of a protrusion or a depression so as to scatter or diffract light, directed to side surfaces of the light-emitting device, upwardly or downwardly of the light-emitting device.

2. The light-emitting device as set forth in claim 1, wherein the side pattern consists of the depression having a surface slanted outwardly on the upper surface of the substrate.

3. The light-emitting device as set forth in claim 2, wherein the depression has an upper surface disposed on the same crystal plane as that of the upper surface of the substrate.

4. The light-emitting device as set forth in claim 1, wherein the substrate has a rectangular-shaped upper surface, and the side pattern is formed along four edges thereof.

5. The light-emitting device as set forth in claim 1, wherein the first and second conductive clad layers, and the active layer are nitride semiconductor layers, respectively.

6. The light-emitting device as set forth in claim 1, wherein the substrate is selected from a sapphire substrate, a SiC substrate, a Si substrate and a GaAs substrate.