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Semiconductor light-emitting device with improved light extraction efficiency

  • US 8,455,906 B2
  • Filed: 11/01/2011
  • Issued: 06/04/2013
  • Est. Priority Date: 11/04/2004
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device, comprising:

  • a substrate used in growing a semiconductor crystal and made of single component;

    a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate,wherein the substrate has a side pattern contacting the first conductive clad layer and continuously formed along all edges of the upper surface thereof by selectively etching the substrate, the side pattern consisting of a protrusion or a depression so as to scatter or diffract light, directed to side surfaces of the light-emitting device, upwardly or downwardly of the light-emitting device.

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