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Semiconductor light emitting devices including flexible unitary film on aluminum nitride substrate

  • US 8,455,909 B2
  • Filed: 01/23/2012
  • Issued: 06/04/2013
  • Est. Priority Date: 03/29/2004
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a substrate comprising aluminum nitride;

    a light emitting diode on a face of the substrate comprising aluminum nitride; and

    a flexible unitary film comprising silicone that extends conformally on the face of the substrate comprising aluminum nitride outside the light emitting diode and that also extends on the light emitting diode, the flexible unitary film comprising silicone including therein a lens comprising silicone adjacent the light emitting diode, such that the light emitting diode emits light through the lens.

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