Image sensor using light-sensitive transparent oxide semiconductor material
First Claim
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1. An image sensor comprising:
- at least one light-sensitive oxide semiconductor layer as a light-sensing layer;
a first transparent insulating layer and a second transparent insulating layer on the at least one light-sensitive oxide semiconductor layer; and
at least one filter layer between the first and second transparent insulating layers, the at least one filter layer directly contacting at least one of the first and second transparent insulating layers.
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Abstract
An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.
8 Citations
34 Claims
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1. An image sensor comprising:
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at least one light-sensitive oxide semiconductor layer as a light-sensing layer; a first transparent insulating layer and a second transparent insulating layer on the at least one light-sensitive oxide semiconductor layer; and at least one filter layer between the first and second transparent insulating layers, the at least one filter layer directly contacting at least one of the first and second transparent insulating layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification