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Image sensor using light-sensitive transparent oxide semiconductor material

  • US 8,455,933 B2
  • Filed: 06/07/2010
  • Issued: 06/04/2013
  • Est. Priority Date: 12/29/2009
  • Status: Active Grant
First Claim
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1. An image sensor comprising:

  • at least one light-sensitive oxide semiconductor layer as a light-sensing layer;

    a first transparent insulating layer and a second transparent insulating layer on the at least one light-sensitive oxide semiconductor layer; and

    at least one filter layer between the first and second transparent insulating layers, the at least one filter layer directly contacting at least one of the first and second transparent insulating layers.

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