Wireless chip and electronic appliance having the same

• US 8,455,954 B2
• Filed: 04/12/2012
• Issued: 06/04/2013
• Est. Priority Date: 03/08/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Suzuki, Yukie, Arai, Yasuyuki, Yamazaki, Shunpei
• Primary Examiner(s): Pert, Evan
• Assistant Examiner(s): MUNOZ, ANDRES F
• Application Number:
  US13/445,262
• Publication Number:
  US 20120193694A1
• Time in Patent Office: 418 Days
• Field of Search: None
• US Class Current: 257/379
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01Q 1/2283 mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 9/0407 Substantially flat resonant element parallel to ground plane, e.g. patch antenna dipole H01Q9/285; monopole H01Q9/40
• CPC Class Codes: H01Q 9/27 Spiral antennas

Abstract

The present invention provides a wireless chip having high mechanical strength. Moreover, the present invention also provides a wireless chip which can prevent an electric wave from being blocked. In a wireless chip of the present invention, a layer having a thin film transistor formed over an insulating substrate is fixed to an antenna by an anisotropic conductive adhesive, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer; the first conductive layer and the second conductive layer has the dielectric layer therebetween; the first conductive layer serves as a radiating electrode; and the second electrode serves as a ground contact body.

Claims

1. A wireless device comprising:

a first layer having a transistor;

a first connection terminal which is formed on a surface of the first layer;

a second layer having one or more passive elements selected from an inductor, a capacitor, and a resistor;

a second connection terminal formed on a first plane of the second layer;

a third connection terminal formed on a second plane which opposes to the first plane;

an antenna having a first conductor, a second conductor, and a third conductor electrically connected to the third connection terminal,

wherein the first layer and the second layer are electronically connected to each other,

wherein the second conductor comprises a first region, a second region and a third region between the first region and the second region,

wherein the second conductor is bent so that a surface of the first region is parallel to a surface of the second region,

wherein the second conductor is separated by a first gap with the first conductor and by a second gap with the third conductor, and

wherein the first conductor has a first surface facing the third conductor and a second surface opposing to the first surface.

2. A wireless device according to claim 1,

wherein the first layer is formed by stacking plural layers having transistors.

3. A wireless device according to claim 1, wherein the transistor is a thin film transistor.

4. A wireless device according to claim 1, wherein the first layer and the second layer are provided on the second surface.

5. A wireless device according to claim 1, wherein a dielectric layer is sandwiched between the first conductor and the third conductor, wherein the dielectric layer is in contact with the first conductor and the third conductor.

6. A wireless device according to claim 1, further comprising a connection layer for electrically connecting the first connection terminal and the second connection terminal.

7. A wireless device according to claim 1, wherein the first conductor is wider than the second conductor.

8. A wireless device comprising:

a first layer having a first transistor;

a first connection terminal which is formed on a surface of the first layer;

a second layer having a second transistor;

a second connection terminal formed on a first plane of the second layer;

a third connection terminal formed on a second plane of the second layer which opposes to the first plane;

an antenna having a first conductor, a second conductor, and a third conductor electrically connected to the third connection terminal,

wherein the first layer and the second layer are electrically connected to each other,

wherein the second conductor comprises a first region, a second region and a third region between the first region and the second region,

wherein the second conductor is bent so that a surface of the first region is parallel to a surface of the second region,

wherein the second conductor is separated by a first gap with the first conductor and by a second gap with the third conductor, and

wherein the first conductor has a first surface facing the third conductor and a second surface opposing to the first surface.

9. A wireless device according to claim 8,

wherein the first layer, and the second layer have thicknesses from 1 μ

m to 10 μ

m.

10. A wireless device according to claim 8,

wherein the first layer, and the second layer have thicknesses from 1 μ

m to 5 μ

m.

11. A wireless device according to claim 8, wherein one of the first transistor and the second transistor is a thin film transistor.

12. A wireless device according to claim 8, wherein the first layer and the second layer are provided on the second surface.

13. A wireless device according to claim 8,

wherein a dielectric layer is sandwiched between the first conductor and the third conductor,

wherein the dielectric layer is in contact with the first conductor and the second conductor.

14. A wireless device according to claim 8, further comprising a connection layer for electrically connecting the first connection terminal and the second connection terminal.

15. A wireless device according to claim 8, wherein the first conductor is wider than the second conductor.

16. A wireless device comprising:

a circuit; and

an antenna having a first conductor, a second conductor and a third conductor,

wherein the circuit is configured to transmit a signal to at least one of the first conductor, the second conductor and the third conductor,

wherein the second conductor comprises a first region, a second region and a third region between the first region and the second region,

wherein the second conductor is bent so that a surface of the first region is parallel to a surface of the second region,

wherein the second conductor is separated by a first gap with the first conductor and by a second gap with the third conductor, and

wherein the first conductor has a first surface facing the third conductor and a second surface opposing to the first surface.

17. A wireless device according to claim 16, wherein the circuit comprises a thin film transistor.

18. A wireless device according to claim 16, wherein the circuit is provided on the second surface.

19. A wireless device according to claim 16,

wherein a dielectric layer is sandwiched between the first conductor and the third conductor,

wherein the dielectric layer is in contact with the first conductor and the second conductor.

20. A wireless device according to claim 16, wherein the first conductor is wider than the second conductor.