Mosfet package

• US 8,455,986 B2
• Filed: 04/30/2012
• Issued: 06/04/2013
• Est. Priority Date: 01/28/1999
• Status: Expired due to Fees

• Current Assignee: Renesas Semiconductor Package & Test Solutions Co., Ltd. (Renesas Electronics Corporation)
• Original Assignee: Hitachi Tohbu Semiconductor, Ltd. (Renesas Electronics Corporation), Renesas Electronics Corporation
• Inventors: Kajiwara, Ryoichi, Koizumi, Masahiro, Morita, Toshiaki, Takahashi, Kazuya, Kishimoto, Munehisa, Ishii, Shigeru, Hirashima, Toshinori, Takahashi, Yasushi, Hata, Toshiyuki, Sato, Hiroshi, Ookawa, Keiichi
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US13/459,839
• Publication Number:
  US 20120217556A1
• Time in Patent Office: 400 Days
• Field of Search: None
• US Class Current: 257/673
• CPC Class Codes: H01L 21/4814 Conductive parts
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/29011 comprising apertures or cavities
• CPC Class Codes: H01L 2224/29015 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29109 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/37011 : comprising apertures or cavities
• CPC Class Codes: H01L 2224/40095 : Kinked
• CPC Class Codes: H01L 2224/40225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48 : of an individual wire connector
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/75251 : in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83101 : as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83138 : the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/28 : Encapsulations, e.g. encapsulating layers, coatings, e.g. for protectionH01L23/552 takes precedence; insulating layers for contacts or interconnections H01L23/5329
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/495 : Lead-frames or other flat leads H01L23/498 takes precedence; lead frame interconnections between components H01L23/52
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49555 : the bent parts being the outer leads
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/49582 : Metallic layers on lead frames
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 29/7833 : with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/0134 : Quaternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H05K 3/3426 : characterised by the leads

Abstract

A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.

Claims

1. A semiconductor device comprising:

a semiconductor chip including a MOSFET and having a first main surface and a second main surface opposite the first main surface,

a source electrode of the MOSFET formed on the first main surface,

a gate electrode of the MOSFET formed on the first main surface, and

a drain electrode of the MOSFET formed on the second main surface;

a first conductive member electrically connecting with the source electrode of the MOSFET via a first conductive material;

a second conductive member electrically connecting with the gate electrode of the MOSFET via a second conductive material; and

a sealing body having a top surface, a bottom surface opposite to the top surface, a first side surface, and a second side surface opposite the first side surface, the first and second side surfaces are disposed between the top and bottom surfaces in a thickness direction of the sealing body, and the sealing body seals parts of the first and second conductive members;

wherein the first and second conductive members are disposed over the first main surface of the semiconductor chip, and a part of each of the first and second conductive members is overlapped with the semiconductor chip in a plan view,

wherein a part of the first conductive member is projected from the first side surface of the sealing body and parts of the first and second conductive members are projected from the second side surface of the sealing body in a plan view,

wherein the second main surface of the semiconductor chip is processed so that it can be soldered, and

wherein the processed surface of the semiconductor chip is exposed from the bottom surface of the sealing body.

2. The semiconductor device according to claim 1,

wherein the gate electrode of the semiconductor chip is more proximate to the second side surface than the first side surface of the sealing body in the plan view.

3. The semiconductor device according to claim 1,

wherein the first conductive member has a first part, the first part is electrically connected to the source electrode of the semiconductor chip, and both ends of the first part are projected from the first and second side surfaces of the sealing body, respectively.

4. The semiconductor device according to claim 3,

wherein the first conductive member has a pair of second parts and a pair of third parts, each of the second parts is disposed outside the first and second side surfaces of the sealing body in the plan view, each of the third parts is disposed outside the first and second side surfaces of the sealing body in the plan view, and each of the third parts is connected via a respective one of the second parts to the first part.

5. The semiconductor device according to claim 4,

wherein the first conductive member is formed by a metal member, and the first, second, and third parts of the first conductive member are unified.

6. The semiconductor device according to claim 1,

wherein each of parts of the first conductive member projected from the sealing body is divided into plurality.

7. The semiconductor device according to claim 4,

wherein each of the third parts of the first conductive member is divided into plurality.

8. The semiconductor device according to claim 1,

wherein parts of top surfaces of the first and second conductive members are covered by the sealing body.

9. The semiconductor device according to claim 1,

wherein an opening is formed in a part which overlaps with the semiconductor chip of the first conductive member in the plan view.

10. The semiconductor device according to claim 9,

wherein the opening is filled with a part of the sealing body.

11. The semiconductor device according to claim 1,

wherein the processed surface of the semiconductor chip and each of mounting surfaces of the first and second conductive members are in a same plane.

12. The semiconductor device according to claim 1,

wherein the second conductive member has a part projected from the first side surface of the sealing body in the plan view.