Boost converter with integrated high power discrete FET and low voltage controller

• US 8,456,141 B2
• Filed: 09/01/2011
• Issued: 06/04/2013
• Est. Priority Date: 06/11/2007
• Status: Active Grant

• Current Assignee: Alpha & Omega Semiconductor, Inc. (Alpha & Omega Semiconductor, Ltd.)
• Original Assignee: Alpha & Omega Semiconductor, Inc. (Alpha & Omega Semiconductor, Ltd.)
• Inventors: Chang, Allen, Cheng, Wai-Keung Peter
• Primary Examiner(s): BERHANE, ADOLF D
• Application Number:
  US13/224,157
• Publication Number:
  US 20110316090A1
• Time in Patent Office: 642 Days
• Field of Search: 323/220, 323/222, 323/282, 323/283, 323/351, 257/676, 257/777
• US Class Current: 323/222
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 23/49503 characterised by the die pad
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01055 Cesium [Cs]
• CPC Class Codes: H01L 2924/07802 not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H02M 3/155 using semiconductor devices only
• CPC Class Codes: H02M 3/156 with automatic control of output voltage or current, e.g. switching regulators

Abstract

A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package on separate electrically isolated die pads.

Claims

1. A boost converter, comprising:

a low voltage controller integrated circuit (IC) mounted to a first die pad;

an external high voltage, vertical, discrete field effect transistor (FET) mounted to a second die pad, the external high voltage, vertical, discrete FET having a gate coupled to the low voltage controller IC;

wherein the low voltage controller IC and the high voltage, vertical, discrete FET are configured as part of a boost converter circuit that boosts an input voltage to a higher output voltage, wherein first and second die pads are separate die pads that are electrically isolated from each other and are packaged together side by side in a single package.

2. The boost converter of claim 1, wherein the low voltage controller integrated circuit includes a pulse-wide modulation (PWM) controller.

3. The boost controller of claim 1, wherein the low voltage controller IC includes an internal sense device.

4. The boost controller of claim 3, wherein the internal sense device includes a resistor or transistor.

5. The boost controller of claim 4 wherein the internal sense device includes a field effect transistor.

6. The boost converter of claim 1 wherein the high voltage, vertical, discrete field effect transistor is attached to the second die pad using a conductive epoxy.

7. The boost controller of claim 1, wherein the low voltage controller IC includes an internal current sense device.

8. The boost controller of claim 7 wherein the internal current sense device includes a resistor or transistor.

9. The boost controller of claim 7 wherein the internal current sense device includes a field effect transistor.

10. The boost converter of claim 7 further comprising an external high voltage Schottky diode mounted to the second die pad.

11. The boost converter of claim 10 wherein the external high voltage Schottky diode is a bottom-anode Schottky diode having a bottom anode coupled to a drain of the a high voltage, vertical, discrete FET.

12. The boost converter of claim 11 wherein the bottom anode of the Schottky diode is in electrical contact with the second die pad.

13. The boost converter of claim 11 wherein the high voltage, vertical, discrete field effect transistor includes a bottom drain in electrical contact with the second die pad.

14. The boost converter of claim 11, wherein the bottom-anode Schottky diode is attached to the second die pad using a conductive epoxy between the bottom anode and the second die pad.

15. The boost converter of claim 6 wherein the first and second die pads are co-packaged in the single package.

16. The boost converter of claim 1 further comprising an external high voltage Schottky diode having an anode coupled to a drain of the high voltage, vertical, discrete FET.