Method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations
First Claim
1. A method implemented in a single integrated circuit (IC), comprising:
- generating a process dependent current associated with a transistor in the single IC, wherein the process dependent current corresponds to a process utilized for manufacturing the single IC;
generating a bandgap current associated with the transistor;
generating a current based on a current temperature of the transistor;
generating an output current based on each of;
the process dependent current, the bandgap current, and the current based on the current temperature; and
compensating for an amount of process variation associated with the single IC based on a voltage generated across a variable resistor implemented within the single IC based on the output current, wherein the variable resistor is adjusted according to a calibration signal output by a finite state machine (FSM).
4 Assignments
0 Petitions
Accused Products
Abstract
Certain aspects of a method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations are disclosed. Aspects of one method may include determining an amount of process variation associated with at least one transistor within a single integrated circuit. The determined amount of process variation may be compensated by utilizing a process dependent current, a bandgap current, and a current associated with a present temperature of the transistor. The process dependent current, the bandgap current and the current associated with the present temperature of the transistor may be combined to generate an output current. A voltage generated across a variable resistor may be determined based on the generated output current.
8 Citations
20 Claims
-
1. A method implemented in a single integrated circuit (IC), comprising:
-
generating a process dependent current associated with a transistor in the single IC, wherein the process dependent current corresponds to a process utilized for manufacturing the single IC; generating a bandgap current associated with the transistor; generating a current based on a current temperature of the transistor; generating an output current based on each of;
the process dependent current, the bandgap current, and the current based on the current temperature; andcompensating for an amount of process variation associated with the single IC based on a voltage generated across a variable resistor implemented within the single IC based on the output current, wherein the variable resistor is adjusted according to a calibration signal output by a finite state machine (FSM). - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A system in a single integrated circuit (IC), comprising:
-
a first process sensor configured to output a bandgap current and a current proportional to an absolute temperature; a sense resistor comprising a variable resistor; a second process sensor configured to output a process dependent current, the second process sensor being coupled to the first process sensor and the variable resistor, wherein the variable resistor is configured to receive an output current based on the bandgap current, the current proportional to an absolute temperature, and the process dependent current;
wherein the sense resistor is configured to generate an output voltage based on the output current; anda calibration circuit configured to adjust the sense resistor utilizing a calibration signal generated according to a comparison of voltages across a precision resistor and the sense resistor. - View Dependent Claims (8, 9, 10, 11, 12, 13)
-
-
14. A method implemented in a single integrated circuit (IC), comprising:
-
generating a process dependent current associated with a transistor in the single IC, wherein the process dependent current corresponds to a transconductance of the transistor; generating a bandgap current associated with the transistor; generating a current based on a current temperature of the transistor; generating an output current based on each of;
the process dependent current, the bandgap current, and the current based on the current temperature; andcompensating for an amount of process variation associated with the single IC based on a voltage generated across a variable resistor implemented within the single IC based on the output current. - View Dependent Claims (15, 16, 17, 18, 19, 20)
-
Specification