Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

• US 8,456,392 B2
• Filed: 09/15/2009
• Issued: 06/04/2013
• Est. Priority Date: 05/31/2007
• Status: Active Grant

• Current Assignee: NthDegree Technologies Worldwide Inc., The United States of America As Represented By The Secretary of Agriculture
• Original Assignee: NthDegree Technologies Worldwide Inc., The United States Of America As Represented By The National Aeronautics And Space Administration
• Inventors: Ray, William Johnstone, Lowenthal, Mark D., Shotton, Neil O., Blanchard, Richard A., Lewandowski, Mark Allan, Fuller, Kirk A., Frazier, Donald Odell
• Primary Examiner(s): Haley, Joseph
• Assistant Examiner(s): HOFFNER, LINH NGUYEN
• Application Number:
  US12/560,355
• Publication Number:
  US 20100068838A1
• Time in Patent Office: 1,358 Days
• Field of Search: 345/82, 345/88, 345/92, 345/69, 345/39, 345/46, 257/88, 257/432
• US Class Current: 345/82
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01L 21/30 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 manufacture of electrodes thereon H01L21/28
• CPC Class Codes: H01L 27/142 Energy conversion devices photovoltaic modules or arrays of single photovoltaic cells comprising bypass diodes integrated or directly associated with the devices H01L31/0443; photovoltaic modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0304 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 31/03044 comprising a nitride compounds, e.g. GaN
• CPC Class Codes: H01L 31/0328 including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/0475 PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046
• CPC Class Codes: H01L 31/05 Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells electrodes H01L31/0224; electrical interconnection of thin film solar cells formed on a common substrate H01L31/046; particular structures for electrical interconnecting of adjacent thin film solar cells in the module H01L31/0465; electrical interconnection means specially adapted for electrically connecting two or more PV modules H02S40/36
• CPC Class Codes: H01L 31/0504 specially adapted for series or parallel connection of solar cells in a module
• CPC Class Codes: H01L 31/0508 the interconnection means having a particular shape
• CPC Class Codes: H01L 31/0512 made of a particular material or composition of materials
• CPC Class Codes: H01L 31/0543 comprising light concentrating means of the refractive type, e.g. lenses
• CPC Class Codes: H01L 31/0547 comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• CPC Class Codes: H01L 31/068 : the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 33/00 : Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01L 33/08 : with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/30 : containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/34 : containing only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H10K 2102/331 : Nanoparticles used in non-emissive layers, e.g. in packaging layer
• CPC Class Codes: H10K 30/87 : Light-trapping means
• CPC Class Codes: H10K 50/80 : Constructional details
• CPC Class Codes: H10K 50/805 : Electrodes
• CPC Class Codes: H10K 50/852 : comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 50/856 : comprising reflective means
• CPC Class Codes: H10K 50/858 : comprising refractive means, e.g. lenses
• CPC Class Codes: H10K 59/00 : Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
• CPC Class Codes: H10K 59/17 : Passive-matrix OLED displays
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/10 : Substrates, e.g. flexible substrates
• CPC Class Codes: Y02E 10/52 : PV systems with concentrators
• CPC Class Codes: Y02E 10/544 : Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 : Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/549 : Organic PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Claims

1. A method of manufacturing an electronic apparatus, the method comprising:

forming a plurality of first conductors coupled to a base;

coupling a plurality of substantially spherical substrate particles to the plurality of first conductors, wherein each substantially spherical substrate particle of the plurality of substantially spherical substrate particles comprises a semiconductor;

subsequent to the coupling to the plurality of first conductors, converting the plurality of substantially spherical substrate particles into a plurality of substantially spherical diodes by depositing a dopant material onto the plurality of substantially spherical substrate particles and annealing or alloying the dopant material with the plurality of substantially spherical substrate particles to form a pn junction in each substantially spherical substrate particle, wherein a mean diameter of the plurality of substantially spherical diodes is greater than about twenty (20) microns and less than about forty (40) microns; and

forming a plurality of second conductors coupled to the plurality of substantially spherical diodes.

2. The method of claim 1, further comprising:

depositing a plurality of lenses suspended in a first polymer.

3. The method of claim 2, wherein the plurality of lenses have at least a first index of refraction and wherein the first polymer has at least a second, different index of refraction.

4. The method of claim 2, wherein the step of depositing further comprises:

printing the plurality of lenses suspended in the first polymer over the plurality of substantially spherical diodes and the plurality of second conductors.

5. The method of claim 2, wherein each lens of the plurality of lenses is substantially spherical and a ratio of a mean diameter of the plurality of lenses to a mean diameter of the plurality of substantially spherical diodes is substantially about five to one (5:

1).

6. The method of claim 2, wherein each lens of the plurality of lenses is substantially spherical and a ratio of a mean diameter of the plurality of lenses to a mean diameter of the plurality of substantially spherical diodes is between about ten to one (10:

1) and two to one (2;

1).

7. The method of claim 2, wherein the comparative size or spacing of the plurality of lenses provide a mode coupling to the plurality of substantially spherical diodes.

8. The method of claim 1, wherein the plurality of lenses comprise borosilicate glass or polystyrene latex.

9. The method of claim 1, wherein the plurality of substantially spherical diodes are semiconductor light emitting diodes or photovoltaic diodes.

10. The method of claim 1, further comprising:

attaching a prefabricated layer to the plurality of substantially spherical diodes, the prefabricated layer comprising a plurality of lenses suspended in a first polymer.

11. The method of claim 1, wherein the semiconductor is selected from the group consisting of:

gallium nitride, gallium arsenide, silicon, and mixtures thereof.

12. The method of claim 1, wherein the step of forming the plurality of first conductors further comprises:

depositing a first conductive medium within a plurality of channels in the base.

13. The method of claim 12, wherein the first conductive medium comprises a conductive ink or a conductive polymer.

14. The method of claim 12, wherein the first conductive medium comprises at least one media selected from the group consisting of:

a silver conductive ink, a copper conductive ink, a gold conductive ink, an aluminum conductive ink, a tin conductive ink, a carbon conductive ink, a carbon nanotube polymer, a conductive polymer, and mixtures thereof.

15. The method of claim 12, further comprising:

partially curing the first conductive medium.

16. The method of claim 15, wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:

depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a carrier medium; and

fully curing the first conductive medium.

17. The method of claim 12, wherein the step of depositing a first conductive medium comprises sputtering, coating, vapor depositing or electroplating a metal, a metal alloy, or a combination of metals.

18. The method of claim 17, wherein the metal, metal alloy, or combination of metals comprise at least one metal selected from the group consisting of:

aluminum, copper, silver, nickel, gold, and mixtures thereof.

19. The method of claim 12, wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:

depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a reactive carrier medium;

removing the reactive carrier medium; and

curing or re-curing the first conductive medium.

20. The method of claim 12, wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:

depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in an anisotropic conductive medium; and

compressing the plurality of substantially spherical substrate particles suspended in the anisotropic conductive medium.

21. The method of claim 12, wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:

depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a volatile carrier medium; and

evaporating the volatile carrier medium.

22. The method of claim 12, wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:

depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a carrier medium; and

annealing or alloying the plurality of substantially spherical substrate particles within the plurality of channels.

23. The method of claim 12, wherein the plurality of channels are spaced-apart and substantially parallel.

24. The method of claim 12, wherein the plurality of channels are at least partially hemispherically-shaped and are disposed in an array.

25. The method of claim 12, wherein the plurality of channels are spaced-apart and least partially parabolic.

26. The method of claim 12, wherein the base further comprises a plurality of angled ridges.

27. The method of claim 12, wherein the plurality of spaced-apart channels further comprise a plurality of integrally formed projections or supports.

28. The method of claim 27, wherein the plurality of first conductors are coupled to the plurality of integrally formed projections or supports within the plurality of spaced-apart channels and wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:

depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a carrier medium; and

annealing, or alloying, or chemically coupling the plurality of substantially spherical substrate particles to the plurality of first conductors.

29. The method of claim 1, wherein the annealing or alloying is laser or thermal annealing or alloying.

30. The method of claim 1, wherein the dopant material is a substrate liquid or film.

31. The method of claim 1, wherein the dopant material is a dopant element or compound suspended in a carrier.

32. The method of claim 1, wherein the dopant material is deposited on a first, upper portion of the plurality of substantially spherical substrate particles to form a substantially hemispherical shell or capped pn junction.

33. The method of claim 32, wherein about fifteen percent to fifty-five percent of a surface of each diode of substantially all of the plurality of substantially spherical diodes has a penetration layer or region having a first majority carrier or dopant and the remaining diode substrate has a second majority carrier or dopant.

34. The method of claim 1, wherein the resulting plurality of substantially spherical diodes are substantially spherical light emitting diodes or substantially spherical photovoltaic diodes.

35. The method of claim 1, further comprising:

depositing a plurality of third conductors over or within the plurality of second conductors.

36. The method of claim 1, further comprising:

coupling a reflector or a refractor to the base.

37. The method of claim 1, wherein the base further comprises a Bragg reflector or a reflective plastic or polyester coating.

38. The method of claim 1, wherein the base further comprises a a plurality of conductive vias extending between a first side and a second side of the base and coupled at the first side to the plurality of first conductors.

39. The method of claim 38, wherein the plurality of conductive vias comprise a plurality of substantially distributed, substantially spherical conductors.

40. The method of claim 39, wherein the base further comprises a conductive backplane coupled to the plurality of conductive vias and coupled to or integrated with the second side of the base.

41. The method of claim 1, further comprising:

depositing a plurality of inorganic dielectric particles suspended with a photoinitiator compound in a second polymer or resin to form a plurality of insulators correspondingly coupled to each of the plurality of substantially spherical diodes.

42. The method of claim 1, wherein the base comprises at least one material selected from the group consisting of:

paper, coated paper, plastic coated paper, embossed paper, fiber paper, cardboard, poster paper, poster board, wood, plastic, rubber, fabric, glass, ceramic, and mixtures thereof.

43. The method of claim 1, wherein the step of forming the plurality of second conductors further comprises:

depositing an optically transmissive conductor or conductive compound suspended in a polymer, resin or other media.

44. The method of claim 43, wherein the optically transmissive conductor or conductive compound suspended in a polymer, resin or other media further comprises at least one conductor or conductive compound selected from the group consisting of:

carbon nanotubes, antimony tin oxide, indium tin oxide, polyethylene- dioxithiophene, and mixtures thereof.

45. The method of claim 1, wherein the forming, coupling and converting steps are performed at least in part by or through a printing process.

46. The method of claim 1, further comprising:

attaching an interface for insertion into a standardized lighting socket.

47. The method of claim 46, wherein the interface is compatible with an E12, E14, E26, E27, or GU-10 lighting standard.

48. The method of claim 46, wherein the interface is compatible with a standard Edison-type lighting socket.

49. The method of claim 46, wherein the interface is compatible with a standard fluorescent-type lighting socket.

50. A method of manufacturing an electronic apparatus, the method comprising:

forming at least one first conductor coupled to a base;

coupling a plurality of substantially spherical substrate particles to the at least one first conductor, wherein each substantially spherical substrate particle of the plurality of substantially spherical substrate particles comprises a semiconductor;

converting the plurality of substantially spherical substrate particles into a plurality of substantially spherical diodes by depositing a dopant material onto the plurality of substantially spherical substrate particles and annealing or alloying the dopant material with the plurality of substantially spherical substrate particles to form a pn junction in each substantially spherical substrate particle, wherein a mean diameter of the plurality of substantially spherical diodes is greater than about twenty (20) microns and less than about forty (40) microns; and

forming at least one second conductor coupled to the plurality of substantially spherical diodes.

51. The method of claim 50, further comprising:

depositing a plurality of lenses suspended in a first polymer, wherein the plurality of lenses have at least a first index of refraction and wherein the first polymer has at least a second, different index of refraction.

52. The method of claim 51, wherein each lens of the plurality of lenses is substantially spherical and a ratio of a mean diameter of the plurality of lenses to a mean diameter of the plurality of substantially spherical diodes is substantially about five to one (5:

1).

53. The method of claim 51, wherein each lens of the plurality of lenses is substantially spherical and a ratio of a mean diameter of the plurality of lenses to a mean diameter of the plurality of substantially spherical diodes is between about ten to one (10:

1) and two to one (2;

1).

54. The method of claim 51, wherein the plurality of lenses comprise borosilicate glass or polystyrene latex.

55. The method of claim 50, wherein the plurality of substantially spherical diodes are semiconductor light emitting diodes or photovoltaic diodes.

56. The method of claim 50, further comprising:

attaching a prefabricated layer to the plurality of substantially spherical diodes, the prefabricated layer comprising a plurality of lenses suspended in a first polymer, wherein the plurality of lenses have at least a first index of refraction and wherein the first polymer has at least a second, different index of refraction.

57. The method of claim 50, wherein the semiconductor is selected from the group consisting of:

gallium nitride, gallium arsenide, silicon, and mixtures thereof.

58. The method of claim 50, wherein the step of forming the at least one first conductor further comprises:

depositing a first conductive medium.

59. The method of claim 58, wherein the first conductive medium comprises at least one media selected from the group consisting of:

a silver conductive ink, a copper conductive ink, a gold conductive ink, an aluminum conductive ink, a tin conductive ink, a carbon conductive ink, a carbon nanotube polymer, a conductive polymer, and mixtures thereof.

60. The method of claim 58, wherein the step of depositing a first conductive medium comprises sputtering, coating, vapor depositing or electroplating a metal, a metal alloy, or a combination of metals.

61. The method of claim 60, wherein the metal, metal alloy, or combination of metals comprise at least one metal selected from the group consisting of:

aluminum, copper, silver, nickel, gold, and mixtures thereof.

62. The method of claim 58, wherein the step of coupling the plurality of substantially spherical substrate particles to the at least one first conductor further comprises:

depositing the plurality of substantially spherical substrate particles suspended in a reactive carrier medium;

removing the reactive carrier medium; and

curing or re-curing the first conductive medium.

63. The method of claim 50, wherein the step of coupling the plurality of substantially spherical substrate particles to the at least one first conductor further comprises:

depositing the plurality of substantially spherical substrate particles suspended in an anisotropic conductive medium;

compressing the plurality of substantially spherical substrate particles suspended in the anisotropic conductive medium.

64. The method of claim 50, wherein the step of coupling the plurality of substantially spherical substrate particles to the at least one first conductor further comprises:

depositing the plurality of substantially spherical substrate particles suspended in a volatile carrier medium; and

evaporating the volatile carrier medium.

65. The method of claim 50, wherein the step of coupling the plurality of substantially spherical substrate particles to the at least one first conductor further comprises:

depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a carrier medium; and

alloying or annealing the plurality of substantially spherical substrate particles within the plurality of channels.

66. The method of claim 50, wherein the annealing or alloying is laser or thermal annealing or alloying.

67. The method of claim 50, wherein the dopant material is a substrate liquid or film or a dopant element or compound suspended in a carrier.

68. The method of claim 50, wherein the dopant material is deposited on a first, upper portion of the plurality of substantially spherical substrate particles to form a substantially hemispherical shell or capped pn junction.

69. The method of claim 68, wherein about fifteen percent to fifty-five percent of a surface of each diode of substantially all of the plurality of substantially spherical diodes has a penetration layer or region having a first majority carrier or dopant and the remaining diode substrate has a second majority carrier or dopant.

70. The method of claim 50, wherein the resulting plurality of substantially spherical diodes are substantially spherical light emitting diodes or substantially spherical photovoltaic diodes.

71. The method of claim 50, further comprising:

depositing at least one third conductor over or within the at least one second conductor.

72. The method of claim 50, further comprising:

coupling a reflector or a refractor to the base.

73. The method of claim 50, wherein the base further comprises a Bragg reflector or a reflective plastic or polyester coating.

74. The method of claim 50, wherein the base further comprises a plurality of conductive vias extending between a first side and a second side of the base and coupled at the first side to the at least one first conductor.

75. The method of claim 74, wherein the plurality of conductive vias comprise a plurality of substantially distributed, substantially spherical conductors.

76. The method of claim 75, wherein the base further comprises a conductive backplane coupled to the plurality of conductive vias and coupled to or integrated with the second side of the base.

77. The method of claim 50, further comprising:

depositing a plurality of inorganic dielectric particles suspended with a photoinitiator compound in a second polymer or resin to form at least one insulator coupled to the plurality of substantially spherical diodes.

78. The method of claim 50, wherein the base comprises at least one material selected from the group consisting of:

paper, coated paper, plastic coated paper, embossed paper, fiber paper, cardboard, poster paper, poster board, wood, plastic, rubber, fabric, glass, ceramic, and mixtures thereof.

79. The method of claim 50, wherein the step of forming the at least one second conductor further comprises:

depositing an optically transmissive conductor or conductive compound suspended in a polymer, resin or other media.

80. The method of claim 79, wherein the optically transmissive conductor or conductive compound suspended in a polymer, resin or other media further comprises at least one conductor or conductive compound selected from the group consisting of:

carbon nanotubes, antimony tin oxide, indium tin oxide, polyethylene- dioxithiophene, and mixtures thereof.

81. The method of claim 50, wherein the forming, coupling and converting steps are performed at least in part by or through a printing process.

82. The method of claim 50, further comprising:

attaching an interface for insertion into a standardized lighting socket.

83. The method of claim 82, wherein the interface is compatible with an E12, E14, E26, E27, or GU-10 lighting standard.

84. The method of claim 82, wherein the interface is compatible with a standard Edison-type lighting socket.

85. The method of claim 82, wherein the interface is compatible with a standard fluorescent-type lighting socket.

86. A method of manufacturing a light emitting electronic apparatus, the method comprising:

forming at least one first conductor coupled to a base;

coupling a plurality of substantially spherical substrate particles to the at least one first conductor;

subsequent to the coupling to the at least one first conductor, converting the plurality of substantially spherical substrate particles into a plurality of substantially spherical light emitting diodes, the plurality of substantially spherical light emitting diodes having a mean diameter greater than about twenty (20) microns and less than about forty (40) microns;

forming at least one second conductor coupled to the plurality of substantially spherical light emitting diodes;

depositing a plurality of substantially spherical lenses suspended in a polymer, the plurality of substantially spherical lenses having at least a first index of refraction and the polymer having at least a second, different index of refraction, wherein a ratio of a mean diameter of the plurality of substantially spherical lenses to a mean diameter of the plurality of substantially spherical light emitting diodes is between about ten to one (10;

1) and two to one (2;

1); and

attaching an interface for insertion into a standardized lighting socket.

87. A method of manufacturing an electronic apparatus, the method comprising:

forming at least one first conductor coupled to a base;

coupling a plurality of substantially spherical substrate particles to the at least one first conductor;

subsequent to the coupling to the at least one first conductor, converting the plurality of substantially spherical substrate particles into a plurality of substantially spherical diodes, about fifteen percent to fifty-five percent of a surface of each diode of substantially all of the plurality of substantially spherical diodes having a penetration layer or region having a first majority carrier or dopant and the remaining diode substrate having a second majority carrier or dopant;

forming at least one second conductor coupled to the plurality of substantially spherical diodes; and

depositing a plurality of substantially spherical lenses suspended in a polymer, the plurality of substantially spherical lenses having at least a first index of refraction and the polymer having at least a second, different index of refraction.