Adhesion type area sensor and display device having adhesion type area sensor

• US 8,456,459 B2
• Filed: 04/23/2009
• Issued: 06/04/2013
• Est. Priority Date: 01/31/2000
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun
• Primary Examiner(s): SHENG, TOM V
• Application Number:
  US12/428,638
• Publication Number:
  US 20090295769A1
• Time in Patent Office: 1,503 Days
• Field of Search: 345 76- 81, 345/205, 345/206, 345/207, 315/169.3, 257/88, 250/553
• US Class Current: 345/207
• CPC Class Codes: G09G 2360/142 the light being detected by light detection means within each pixel
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H01L 31/14 the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
• CPC Class Codes: H04N 25/534 depending on the spectral component
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor
• CPC Class Codes: H10K 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors

Abstract

A lightweight, thin, small size semiconductor device is provided. A pixel has a display portion, and a light receiving portion comprising a photodiode. A transistor is used with the semiconductor device for controlling the operation of the display portion and the light receiving portion.

Claims

1. A semiconductor device comprising:

a pixel comprising a light receiving portion and a display portion, the pixel comprising a first thin film transistor, a photodiode, a reset gate signal line, a sensor gate signal line, a sensor output wiring, and a sensor electric power source line,

wherein the first thin film transistor comprises a semiconductor layer,

wherein the photodiode comprises a photoelectric conversion layer,

wherein the semiconductor layer and the photoelectric conversion layer are formed on a same surface,

wherein when a light from the display portion is reflected by a subject, the pixel is configured to irradiate the photoelectric conversion layer with the light reflected by the subject,

wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring,

wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line,

wherein a gate of the first thin film transistor is electrically connected to a first terminal of the photodiode,

wherein a gate insulating film is interposed between the semiconductor layer and the gate of the first thin film transistor,

wherein an inter layer film is formed over the gate of the first thin film transistor, and

wherein the inter layer film is in contact with the gate insulating film over the photoelectric conversion layer.

2. A semiconductor device according to claim 1, wherein the semiconductor layer and the photoelectric conversion layer are crystalline silicon films.

3. A semiconductor device according to claim 1, further comprising a touch panel.

4. A scanner comprising a semiconductor device according to claim 1.

5. A semiconductor device according to claim 1, wherein the pixel further comprises an EL element.

6. A semiconductor device according to claim 1,

wherein the reset gate signal line is configured to control a reset operation of the pixel, and

wherein the sensor gate signal line is configured to control an output operation of the pixel for outputting an image signal from the pixel.

7. A semiconductor device according to claim 1, further comprising a second thin film transistor and a third thin film transistor,

wherein a first terminal of the second thin film transistor is electrically connected to the gate of the first thin film transistor,

wherein a second terminal of the second thin film transistor is electrically connected to the sensor electric power source line,

wherein a gate of the second thin film transistor is electrically connected to the reset gate signal line,

wherein a first terminal of the third thin film transistor is electrically connected to the first terminal of the first thin film transistor,

wherein a second terminal of the third thin film transistor is electrically connected to the sensor output wiring, and

wherein a gate of the third thin film transistor is electrically connected to the sensor gate signal line.

8. A semiconductor device according to claim 1,

wherein the first thin film transistor is formed on a first surface of a substrate, wherein a light source is formed on the side of the first surface of the substrate,

wherein the subject is formed on the side of a second surface of the substrate opposite to the first surface of the substrate,

wherein the light source is configured to emit light in a direction from the side of the first surface of the substrate to the side of the second surface of the substrate,

wherein the subject is configured to reflect light emitted from the light source in a direction from the side of the second surface of the substrate to the side of the first surface of the substrate, and

wherein the photodiode is configured to receive light reflected from the subject.

9. A semiconductor device according to claim 1, further comprising a second pixel and a third pixel,

wherein the pixel is configured to emit a first color light in a first period,

wherein the second pixel is configured to emit a second color light in a second period,

wherein the third pixel is configured to emit a third color light in a third period,

wherein each of the pixel, the second pixel, and the third pixel is configured to generate a first image signal correspond to the first color light in the first period,

wherein each of the pixel, the second pixel, and the third pixel is configured to generate a second image signal correspond to the second color light in the second period, and

wherein each of the pixel, the second pixel, and the third pixel is configured to generate a third image signal correspond to the third color light in the third period.

10. A semiconductor device comprising:

a driver portion comprising a first thin film transistor; and

a sensor portion configured to display an image by using a light emitted from a light source, the sensor portion comprising a pixel comprising a second thin film transistor, a photodiode, a reset gate signal line, a sensor gate signal line, a sensor output wiring, and a sensor electric power source line,

wherein the first thin film transistor comprises a first semiconductor layer formed on a base film over a glass substrate,

wherein the second thin film transistor comprises a second semiconductor layer formed on the base film over the glass substrate,

wherein the photodiode comprises a third semiconductor layer formed on the base film over the glass substrate,

wherein when the light emitted from the light source is reflected by a subject, the sensor portion is configured to irradiate the third semiconductor layer with the light reflected by the subject,

wherein a first terminal of the second thin film transistor is electrically connected to the sensor output wiring,

wherein a second terminal of the second thin film transistor is electrically connected to the sensor electric power source line,

wherein a gate of the second thin film transistor is electrically connected to a first terminal of the photodiode,

wherein a gate insulating film is interposed between the second semiconductor layer and the gate of the second thin film transistor,

wherein an inter layer film is formed over the gate of the second thin film transistor, and

wherein the inter layer film is in contact with the gate insulating film over the third semiconductor layer.

11. A semiconductor device according to claim 10, wherein the light source is an EL element.

12. A semiconductor device according to claim 10, wherein the first semiconductor layer, the second semiconductor layer and the third semiconductor layer are crystalline silicon films.

13. A semiconductor device according to claim 10, further comprising a touch panel.

14. A scanner comprising a semiconductor device according to claim 10.

15. A semiconductor device according to claim 10,

wherein the reset gate signal line is configured to control a reset operation of the pixel, and

wherein the sensor gate signal line is configured to control an output operation of the pixel for outputting an image signal from the pixel.

16. A semiconductor device according to claim 10, further comprising a third thin film transistor and a fourth thin film transistor,

wherein a first terminal of the third thin film transistor is electrically connected to the gate of the second thin film transistor,

wherein a second terminal of the third thin film transistor is electrically connected to the sensor electric power source line,

wherein a gate of the third thin film transistor is electrically connected to the reset gate signal line,

wherein a first terminal of the fourth thin film transistor is electrically connected to the first terminal of the second thin film transistor,

wherein a second terminal of the fourth thin film transistor is electrically connected to the sensor output wiring, and

wherein a gate of the fourth thin film transistor is electrically connected to the sensor gate signal line.

17. A semiconductor device comprising:

a pixel comprising a light receiving portion and a display portion, the pixel comprising a first thin film transistor, a photodiode, a reset gate signal line, a sensor gate signal line, a sensor output wiring, and a sensor electric power source line,

wherein the first thin film transistor comprises a semiconductor layer,

wherein the photodiode comprises a photoelectric conversion layer,

wherein the semiconductor layer and the photoelectric conversion layer are formed on a same surface,

wherein the pixel is configured to receive a reflected light from a subject in order to scan an image of the subject,

wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring,

wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line,

wherein a gate of the first thin film transistor is electrically connected to a first terminal of the photodiode,

wherein a gate insulating film is interposed between the semiconductor layer and the gate of the first thin film transistor,

wherein an inter layer film is formed over the gate of the first thin film transistor, and

wherein the inter layer film is in contact with the gate insulating film over the photoelectric conversion layer.

18. A semiconductor device according to claim 17, wherein the semiconductor layer and the photoelectric conversion layer are crystalline silicon films.

19. A semiconductor device according to claim 17, further comprising a touch pen and a touch panel.

20. A scanner comprising a semiconductor device according to claim 17.

21. A semiconductor device according to claim 17, wherein the pixel further comprises an EL element.

22. A semiconductor device according to claim 17,

wherein the reset gate signal line is configured to control a reset operation of the pixel, and

wherein the sensor gate signal line is configured to control an output operation of the pixel for outputting an image signal from the pixel.

23. A semiconductor device according to claim 17, further comprising a second thin film transistor and a third thin film transistor,

wherein a first terminal of the second thin film transistor is electrically connected to the gate of the first thin film transistor,

wherein a second terminal of the second thin film transistor is electrically connected to the sensor electric power source line,

wherein a gate of the second thin film transistor is electrically connected to the reset gate signal line,

wherein a first terminal of the third thin film transistor is electrically connected to the first terminal of the first thin film transistor,

wherein a second terminal of the third thin film transistor is electrically connected to the sensor output wiring, and

wherein a gate of the third thin film transistor is electrically connected to the sensor gate signal line.

24. A semiconductor device comprising:

a driver portion comprising a first thin film transistor; and

a sensor portion configured to display an image by using a light emitted from a light source, the sensor portion comprising a pixel comprising a second thin film transistor, a photodiode, a reset gate signal line, a sensor gate signal line, a sensor output wiring, and a sensor electric power source line,

wherein the first thin film transistor comprises a first semiconductor layer formed on a base film over a glass substrate,

wherein the second thin film transistor comprises a second semiconductor layer formed on the base film over the glass substrate,

wherein the photodiode comprises a third semiconductor layer formed on the base film over the glass substrate,

wherein the sensor portion is configured to receive a reflected light from a subject in order to scan an image of the subject,

wherein a first terminal of the second thin film transistor is electrically connected to the sensor output wiring,

wherein a second terminal of the second thin film transistor is electrically connected to the sensor electric power source line,

wherein a gate of the second thin film transistor is electrically connected to a first terminal of the photodiode,

wherein a gate insulating film is interposed between the second semiconductor layer and the gate of the second thin film transistor,

wherein an inter layer film is formed over the gate of the second thin film transistor, and

wherein the inter layer film is in contact with the gate insulating film over the third semiconductor layer.

25. A semiconductor device according to claim 24, wherein the light source is an EL element.

26. A semiconductor device according to claim 24, wherein the first semiconductor layer, the second semiconductor layer and the third semiconductor layer are crystalline silicon films.

27. A semiconductor device according to claim 24, further comprising a touch panel.

28. A scanner comprising a semiconductor device according to claim 24.

29. A semiconductor device according to claim 24,

wherein the reset gate signal line is configured to control a reset operation of the pixel, and

wherein the sensor gate signal line is configured to control an output operation of the pixel for outputting an image signal from the pixel.

30. A semiconductor device according to claim 24, further comprising a third thin film transistor and a fourth thin film transistor,

wherein a first terminal of the third thin film transistor is electrically connected to the gate of the second thin film transistor,

wherein a second terminal of the third thin film transistor is electrically connected to the sensor electric power source line,

wherein a gate of the third thin film transistor is electrically connected to the reset gate signal line,

wherein a first terminal of the fourth thin film transistor is electrically connected to the first terminal of the second thin film transistor,

wherein a second terminal of the fourth thin film transistor is electrically connected to the sensor output wiring, and

wherein a gate of the fourth thin film transistor is electrically connected to the sensor gate signal line.