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Method of spin torque MRAM process integration

  • US 8,456,883 B1
  • Filed: 05/29/2012
  • Issued: 06/04/2013
  • Est. Priority Date: 05/29/2012
  • Status: Active Grant
First Claim
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1. A method of fabricating a magnetic random access memory device comprising:

  • providing CMOS devices in a substrate having a topmost metal layer wherein said topmost metal layer comprises metal landing pads and metal connecting pads;

    providing a plurality of magnetic tunnel junction (MTJ) structures over said CMOS devices and connected to said metal landing pads;

    covering said MTJ structures with a first dielectric layer and polishing said first dielectric layer until said MTJ structures are exposed;

    etching openings in said first dielectric layer to said metal connecting pads;

    filling said openings with a copper layer;

    etching back said copper layer to leave said copper layer only within said openings;

    thereafter, depositing an aluminum layer over said first dielectric layer contacting said copper layer and said MTJ structures; and

    patterning said aluminum layer to form a bit line.

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