Switched diverter circuits for minimizing heating of an implanted lead and/or providing EMI protection in a high power electromagnetic field environment

• US 8,457,760 B2
• Filed: 02/17/2010
• Issued: 06/04/2013
• Est. Priority Date: 04/13/2001
• Status: Expired due to Fees

• Current Assignee: Greatbatch Limited (Greatbatch Incorporated)
• Original Assignee: Greatbatch Limited (Greatbatch Incorporated)
• Inventors: Johnson, Robert Shawn, Dabney, Warren S., Stevenson, Robert A., Williams, Christopher Michael, Moschiano, Holly Noelle, Brainard, Scott, Kaiser, Daniel Robert, Halperin, Henry R., Lardo, Albert C., Kelley, Scott W.
• Primary Examiner(s): Layno, Carl H
• Assistant Examiner(s): Morales, Jon Eric C.
• Application Number:
  US12/707,568
• Publication Number:
  US 20100191236A1
• Time in Patent Office: 1,203 Days
• Field of Search: 607/45, 607/9, 607/2, 607/48, 607/60, 607/63
• US Class Current: 607/63
• CPC Class Codes: A61B 2018/00452 Skin
• CPC Class Codes: A61B 2018/00839 Bioelectrical parameters, e.g. ECG, EEG
• CPC Class Codes: A61B 2090/374 NMR or MRI
• CPC Class Codes: A61B 5/055 involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• CPC Class Codes: A61B 5/24 Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• CPC Class Codes: A61B 5/283 Invasive
• CPC Class Codes: A61B 5/7203 for noise prevention, reduction or removal
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: A61N 1/086 Magnetic resonance imaging [MRI] compatible leads
• CPC Class Codes: A61N 1/3718 Monitoring of or protection against external electromagnetic fields or currents
• CPC Class Codes: G01R 33/286 involving passive visualization of interventional instruments, i.e. making the instrument visible as part of the normal MR process
• CPC Class Codes: G01R 33/288 Provisions within MR facilities for enhancing safety during MR, e.g. reduction of the specific absorption rate [SAR], detection of ferromagnetic objects in the scanner room
• CPC Class Codes: H03H 7/0107 Non-linear filters
• CPC Class Codes: H03H 7/1758 Series LC in shunt or branch path H03H7/1791 takes precedence
• CPC Class Codes: H03H 7/1766 Parallel LC in series path H03H7/1783 takes precedence

Abstract

An energy management system that facilitates the transfer of high frequency energy induced on an implanted lead or a leadwire includes an energy dissipating surface associated with the implanted lead or the leadwire, a diversion or diverter circuit associated with the energy dissipating surface, and at least one non-linear circuit element switch for diverting energy in the implanted lead or the leadwire through the diversion circuit to the energy dissipating surface. In alternate configurations, the switch may be disposed between the implanted lead or the leadwire and the diversion circuit, or disposed so that it electrically opens the implanted lead or the leadwire when diverting energy through the diversion circuit to the energy dissipating surface. The non-linear circuit element switch is typically a PIN diode. The diversion circuit may be either a high pass filter or a low pass filter.

Claims

1. An active implantable medical device (AIMD), comprising:

a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical point, the first electrical point being electrically connectable to an electrode configured for tissue-stimulating or biological-sensing;

b) at least one frequency variable impedance diversion circuit electrically connecting between the first electrical point and a second electrical point;

c) an energy dissipating surface provided by the device housing as a third electrical point; and

d) at least one diode residing between the second electrical point and the third electrical point, wherein the diode is actuatable in response to a bias applied across the second and third electrical points to thereby electrically connect the diversion circuit from the first electrical point to the third electrical point at the energy dissipating surface,

e) wherein with the diode electrically connecting the second electrical point to the third electrical point and;

i) at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a relatively low impedance circuit from the first electrical point to the third electrical point at the energy dissipating surface, and

ii) at relatively low frequencies attendant to the AIMD being subjected to an MRI gradient field, the diversion circuit acts as a relatively high impedance circuit from the first electrical point to the third electrical point at the energy dissipating surface.

2. The active implantable medical device of claim 1 wherein the at least one diode comprises at least one PIN diode.

3. The active implantable medical device of claim 1 wherein the switch comprises at least one PIN diode.

4. The active implantable medical device of claim 1 selected from the group consisting of an implantable hearing device, a neurostimulator, a brain stimulator, a cardiac pacemaker, a left ventricular assist device, an artificial heart, a drug pump, a bone growth stimulator, a urinary incontinence device, a probe, a catheter, a spinal cord stimulator, an anti-tremor stimulator, an implantable cardioverter defibrillator, a congestive heart failure device, and a cardiac resynchronization therapy device.

5. The active implantable medical device of claim 1, wherein the first electrical point is electrically connectable to an implantable lead comprising at least one leadwire having a length extending between and to a proximal end electrically connectable to the medical device including the tissue-stimulating or biological sensing circuits and an electrode configured for tissue-stimulating or biological-sensing at or near a distal end of the leadwire.

6. The active implantable medical device of claim 5, wherein the energy dissipating surface is disposed at a point or an area spaced from the first electrical point.

7. The active implantable medical device of claim 6, wherein the energy dissipating surface is configured to be disposed within the blood flow of a patient.

8. The active implantable medical device of claim 1, including an impeding circuit in series between the first electrical point and a fourth electrical point at the tissue-stimulating or biological-sensing circuits.

9. The active implantable medical device of claim 8, wherein the impeding circuit comprises an inductor.

10. The active implantable medical device of claim 9, wherein the impeding circuit comprises a plurality of capacitors, each capacitor in series with a respective non-linear circuit element, each series connected capacitor and non-linear circuit element being electrically connected in parallel with the inductor to form a plurality of switch actuatable parallel bandstop filters which share a common inductor.

11. The active implantable medical device claim 10, wherein the non-linear circuit elements comprise PIN diodes.

12. The active implantable medical device of claim 8, wherein the impeding circuit comprises at least one L-C bandstop filter.

13. The active implantable medical device of claim 8, wherein the impeding circuit comprises a transient voltage suppressor.

14. The active implantable medical device of claim 9 or 12, wherein the diversion circuit comprises a low pass filter.

15. The active implantable medical device of claim 14, wherein the low pass filter comprises a capacitor, an inductor, a Pi filter, a T filter, an LL filter, or an “

n”

element filter.

16. The active implantable medical device of claim 9 or 12, wherein the diversion circuit comprises at least one series resonant L-C trap filter.

17. The active implantable medical device of claim 16, wherein the diversion circuit comprises a plurality of L-C trap filters resonant respectively at different MRI frequencies.

18. The active implantable medical device claim 1, wherein the device housing providing the energy dissipating surface comprises convolutions or fins for increasing the surface area thereof.

19. The active implantable medical device claim 1, wherein the device housing providing the energy dissipating surface includes a roughened surface.

20. The active implantable medical device of claim 19, wherein the roughened surface is formed from at least one of the group consisting of plasma or chemical etching, porous or fractal coatings or surfaces, whiskers, morphologically designed columnar structures, vapor, electron beam or sputter deposition of a high surface area energy conductive material, and carbon nanotubes.

21. The active implantable medical device of claim 1 or 2, wherein the energy dissipating surface comprises at least a portion of a probe or a catheter handle.

22. The active implantable medical device of claim 1, wherein the diversion circuit is mounted within the housing.

23. The active implantable medical device of claim 22, wherein the energy dissipating surface is hermetically sealed.

24. The active implantable medical device of claim 1, wherein the energy dissipating surface comprises at least a portion of a body or a handle for a probe or catheter.

25. The active implantable medical device of claim 1, wherein the energy dissipating surface comprises a material capable of being visualized during a magnetic resonance scan.

26. The active implantable medical device of claim 1, wherein the energy dissipating surface includes a biomimetic coating.

27. The active implantable medical device of claim 1, wherein a transient voltage suppressor is in parallel with the diversion circuit.

28. The active implantable medical device of claim 1 wherein the diversion circuit comprises a capacitor.

29. The active implantable medical device of claim 1 wherein the diversion circuit, further comprises a series capacitor as a high pass filter.

30. The active implantable medical device of claim 1 wherein the diversion circuit further comprises an L-C trap filter.

31. The active implantable medical device of claim 1 wherein the diversion circuit is disposed within a header block for the AIMD.

39. The active implantable medical device of claim 1 or 32 wherein the diversion circuit further comprises a low pass filter or a high pass filter.

40. The active implantable medical device of claim 39, wherein the low pass filter is selected from the group consisting of a capacitor, an inductor, a Pi filter, a T filter, an LL filter, and an “

n”

element filter.

41. The active implantable medical device of claim 40, wherein the diversion circuit comprises a unipolar or a multipolar feedthrough capacitor.

42. The active implantable medical device of claim 1 or 32 wherein the diversion circuit comprises at least one series resonant L-C trap filter.

43. The active implantable medical device of claim 42, wherein the diversion circuit comprises a plurality of L-C trap filters in parallel with each other and in series between the first and second electrical points, the plurality of L-C trap filters being resonant, respectively, at different MRI frequencies.

32. An active implantable medical device (AIMD), comprising:

a) a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical point;

b) an implantable lead comprising at least one leadwire having a length extending between and to a proximal end electrically connected to the first electrical point at the tissue-stimulating or biological-sensing circuits and an electrode configured for tissue-stimulating or biological-sensing at or near a distal end of the leadwire;

c) at least one frequency variable impedance diversion circuit electrically connecting between the first electrical point and a second electrical point;

d) an energy dissipating surface provided by the device housing as a third electrical point; and

e) at least one diode residing between the second electrical point and the third electrical point, wherein the diode is actuatable in response to a bias applied across the second and third electrical points to thereby electrically connect the diversion circuit from the first electrical point to the third electrical point at the energy dissipating surface,

f) wherein with the diode electrically connecting the second electrical point to the third electrical point and;

i) at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a relatively low impedance circuit from the first electrical point to the third electrical point at the energy dissipating surface, and

ii) at relatively low frequencies attendant to the AIMD being subjected to an MRI gradient field, the diversion circuit acts as a relatively high impedance circuit between the first electrical point and the third electrical point at the energy dissipating surface.

33. The active implantable medical device of claim 32 wherein the implantable lead or the leadwire has impedance characteristics at a selected RF frequency or frequency band, and wherein the diversion circuit has impedance characteristics at least partially tuned to the impedance characteristics of the implantable lead or the leadwire.

34. The active implantable medical device of claim 33, wherein the selected RF frequency or frequency band comprises an MRI frequency.

35. The active implantable medical device of claim 34, wherein the MRI frequency comprises a range of MRI frequencies.

36. The active implantable medical device of claim 33, wherein the diversion circuit has a reactance which is vectorially opposite to the characteristic reactance of the implantable lead or the implantable leadwire.

37. The active implantable medical device of claim 36, wherein the diversion circuit has a capacitive reactance that is generally equal and opposite to the characteristic inductive reactance of the implantable lead or the implantable leadwire.

38. The active implantable medical device of claim 33, wherein the capacitive reactance and the inductive reactance each have a resistor component.

44. The active implantable medical device of claim 32 wherein the energy dissipating surface is spaced from the electrode and selected from the group consisting essentially of a sheath, a conductive body, the AIMD housing, and a thermally conductive element.

45. The active implantable medical device of claim 32 wherein the implantable lead comprises at least a pair of leadwires, each having a length extending between and to a proximal end and a tissue-stimulating or biological-sensing electrode.

46. The active implantable medical device of claim 45, wherein the diversion circuit electrically couples the energy dissipating surface to a point or an area distant from each of the electrodes.

47. The active implantable medical device of claim 45 or 46, wherein the diversion circuit is coupled between the pair of leads.

48. The active implantable medical device of claim 32 comprising a deep brain stimulator.

49. The active implantable medical device of claim 48, wherein the housing is adapted for mounting in thermal communication with a patient'"'"'s skull.

50. The active implantable medical device of claim 48, further comprising an electrode shaft assembly having a proximal end carried by the housing, the at least one lead extending through the electrode shaft assembly and having a distal electrode for contacting patient brain tissue.

51. The active implantable medical device of claim 32 further comprising means for hermetically sealed mounting of the energy dissipating surface along the lead between proximal and distal ends thereof, the hermetically sealed means defining a chamber having the diversion circuit mounted therein.

52. The active implantable medical device of claim 51, wherein the lead comprises a first lead having at least one electrode at a distal end thereof, and a second lead having at least one electrode at a distal end thereof, the first and second leads each having the energy dissipating surface disposed in hermetically sealed relation therewith and extending through the chamber, the diversion circuit coupling the first and second leads to the energy dissipating surface.

53. The active implantable medical device of claim 52, wherein the diversion circuit comprises a unipolar or a multipolar feedthrough capacitor.

54. The active implantable medical device of claim 51, further comprising an impeding circuit electrically connected in series between the first electrical point and a fourth electrical point at the tissue-stimulating and biological-sensing circuits, wherein the impeding circuit is mounted within the hermetically sealed chamber.

55. The active implantable medical device of claim 32 wherein the energy dissipating surface comprises a handle of a probe or a catheter.

56. The active implantable medical device of claim 55, wherein the electrode comprises an ablation tip electrode.

57. The active implantable medical device of claim 54, further comprising a probe housing having the ablation tip electrode at or near a distal end thereof, wherein the energy dissipating surface is disposed at a point or an area distant from the ablation tip electrode, the diversion circuit diverting high frequency energy away from the ablation tip electrode to the energy dissipating surface.

58. The active implantable medical device of claim 56 comprising a first lead having the ablation tip electrode at or near a distal end thereof, at least one second lead having a ring electrode at or near a distal end thereof, the diversion circuit diverting high frequency energy away from the ablation tip and ring electrodes to the energy dissipating surface.

59. The active implantable medical device of claim 32 wherein the diversion circuit is disposed at or adjacent to the proximal end of the implantable lead.

60. The active implantable medical device of claim 32 wherein the diversion circuit is disposed in a proximal lead connector.

61. The active implantable medical device of claim 32 including an EMI shield conductively coupled to the housing and coaxially extending about the leadwire disposed inside the housing in non-conductive relation thereto and wherein the diversion circuit is conductively connected to the EMI shield.

62. The active implantable medical device of claim 32 wherein the at least one diode is disposed in series with the implantable lead or the leadwire.

63. The active implantable medical device of claim 32 wherein the diversion circuit extends from the lead or the leadwire to the energy dissipating surface.

64. The active implantable medical device of claim 32 wherein the at least one diode disconnects the tissue-stimulating or biological-sensing circuits from the implantable lead or the leadwire during an MRI scan.

65. The active implantable medical device of claim 32 wherein at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a short from the first electrical point to the energy dissipating surface at the third electrical point, and at relatively low frequencies attendant to the medical device being subjected to an MRI gradient field, the diversion circuit acts as an open circuit from the first electrical point to the energy dissipating surface.

66. The active implantable medical device of claim 32 including an impeding circuit in series between the first electrical point and a fourth electrical point at the tissue-stimulating or biological-sensing circuits, wherein the impeding circuit is configured to raise the high frequency impedance of the implanted lead or the leadwire.

67. An active implantable medical device (AIMD), comprising:

a) a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical point, the first electrical point being electrically connectable to an electrode configured for tissue-stimulating or biological-sensing;

b) an energy dissipating surface provided by the device housing as a second electrical point;

c) at least one frequency variable impedance diversion circuit residing between the second electrical point and a third electrical point; and

d) at least one diode that is actuatable in response to a bias to electrically connect the first electrical point to the third electrical point,

e) wherein with the diode being subjected to a bias to electrically connect the first electrical point to the third electrical point and;

i) at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a relatively low impedance circuit from the third electrical point to the second electrical point at the energy dissipating surface, and

ii) at relatively low frequencies attendant to the AIMD being subjected to an MRI gradient field, the diversion circuit acts as a relatively high impedance circuit from the third electrical point to the second electrical point at the energy dissipating surface.

68. The implantable medical device of claim 67 wherein the first electrical, point is electrically connectable to an implantable lead comprising at least one leadwire having a length extending between and to a proximal end electrically connectable to the medical device including the tissue-stimulating or biological-sensing circuits and an electrode configured for tissue-stimulating or biological-sensing at or near a distal end of the leadwire.

69. An active implantable medical device (AIMD), comprising:

a) a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical, point, the first electrical point being electrically connectable to an electrode configured for tissue-stimulating or biological-sensing;

b) an implantable lead comprising at least one leadwire having a length extending between and to a proximal end electrically connected to the medical device including the tissue-stimulating or biological-sensing circuits at the first electrical point and an electrode configured for tissue-stimulating or biological-sensing at or near a distal end of the leadwire;

c) an energy dissipating surface provided by the device housing as a second electrical point;

d) at least one frequency variable impedance diversion circuit residing between the second electrical point and a third electrical point; and

e) at least one diode that is actuatable in response to a bias to electrically connect the first electrical point to the third electrical point,

f) wherein with the diode being subjected to a bias to electrically connect the third electrical point to the second electrical point at the energy dissipating surface and;

i) at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a relatively low impedance circuit from the third electrical point to the second electrical point at the energy dissipating surface, and

ii) at relatively low frequencies attendant to the AIMD being subjected to an MRI gradient field, the diversion circuit acts as a relatively high impedance circuit from the third electrical point to the second electrical point at the energy dissipating surface.

70. An active implantable medical device (AIMD), comprising:

a) a conductive device housing containing tissue-stimulating or biological-sensing circuits;

b) an energy dissipating surface provided by the device housing;

c) at least one frequency variable impedance diversion circuit electrically connected to the device housing; and

d) at least one diode that is actuatable in response to a bias to electrically connect a terminal for an implantable lead to the diversion circuit connected to the energy dissipating surface,

e) wherein with the diode electrically connecting the terminal to the diversion circuit in response to the bias and;

i) at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a relatively low impedance circuit between the terminal and the energy dissipating surface, and

ii) at relatively low frequencies attendant to the AIMD being subjected to an MRI gradient field, the diversion circuit acts as a relatively high impedance circuit from the terminal to the energy dissipating surface.

71. The implantable medical device of claim 70 selected from the group consisting of an implantable hearing device, a neurostimulator, a brain stimulator, a cardiac pacemaker, a left ventricular assist device, an artificial heart, a drug pump, a bone growth stimulator, a urinary incontinence device, a probe, a catheter, a spinal cord stimulator, an anti-tremor stimulator, an implantable cardioverter defibrillator, a congestive heart failure device, and a cardio resynchronization therapy device.

72. A switched diverter circuit for a medical device, the switched diverter circuit comprising:

a) a first conductor that is electrically connectable to an energy dissipating surface for an active implantable medical device (AIMD);

b) a second conductor that electrically connects from a lead terminal for an implantable lead to tissue-stimulating or biological-sensing circuits for the AIMD;

c) at least one frequency variable impedance diversion circuit that electrically connects to the second conductor intermediate the lead terminal and the tissue-stimulating or biological-sensing circuits;

d) a third conductor that electrically connects from the diversion circuit opposite the second conductor to at least one diode in series between the diversion circuit and the energy dissipating surface, the diode being actuatable in response to a bias, wherein with the diode in a biased state and;

i) at relatively high frequencies attendant to an MRI RF pulse field, the diversion circuit shorts the third conductor to the first conductor electrically connectable to the energy dissipating surface, and

ii) at relatively low frequencies attendant to an MRI gradient field, the diversion circuit acts as an open circuit from the third conductor to the first conductor electrically connectable to the energy dissipating surface.

73. The switched diverter circuit of claim 72 including a second diode positioned between where the at least one diversion circuit is electrically connected to the second conductor intermediate and the tissue-stimulating or biological-sensing circuits, wherein the second diode is actuatable in response to a second DC bias to electrically connect the lead terminal to the tissue-stimulating and biological-sensing circuits.

74. A switched diverter circuit for a medical device, the switched diverter circuit comprising:

a) a first conductor that is connectable to an energy dissipating surface for an active implantable medical device (AIMD);

b) at least one frequency variable impedance diversion circuit that is electrically connected to an opposite end of the first conductor;

c) a second conductor that electrically connects from a lead terminal for an implantable lead to tissue-stimulating or biological-sensing circuits for the AIMD;

d) a third conductor that electrically connects from the diversion circuit opposite the first conductor;

e) at least one diode that connects from the second conductor to the third conductor at the diversion circuit and that is actuatable in response to a bias, wherein with the diode in a biased state and;

i) at relatively high frequencies attendant to an MRI RF pulse field, the diversion circuit shorts the second and third conductors electrically connected from the lead terminal to the first conductor at the energy dissipating surface, and

ii) at relatively low frequencies attendant to an MRI gradient field, the diversion circuit acts as an open circuit between the second and third conductors electrically connected from the lead terminal to the first conductor at the energy dissipating surface.

75. An active implantable medical device (AIMD), comprising:

a) a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical point, the first electrical point being electrically connectable to an electrode configured for tissue-stimulating or biological-sensing;

a plurality of L-C trap filters in parallel with each other and in series between the first electrical point and a second electrical point, wherein the L-C trap filters are resonant, respectively, at different MRI frequencies;

c) an energy dissipating surface provided by the device housing as a third electrical point; and

d) at least one diode residing between the second electrical point and the third electrical point, wherein the diode is actuatable in response to a bias applied across the second and third electrical points to thereby electrically connect the diversion circuit from the first electrical point to the third electrical point at the energy dissipating surface,

e) wherein with the diode electrically connecting the second electrical point to the third electrical point and;

i) at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a relatively low impedance circuit from the first electrical point to the third electrical point at the energy dissipating surface, and

ii) at relatively low frequencies attendant to the AIMD being subjected to an MRI gradient field, the diversion circuit acts as a relatively high impedance circuit from the first electrical point to the third electrical point at the energy dissipating surface.

76. An active implantable medical device (AIMD), comprising:

a) a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical point, the first electrical point being electrically connectable to an electrode configured for tissue-stimulating or biological-sensing;

b) a diversion circuit electrically connecting between the first electrical point and a second electrical point;

c) an energy dissipating surface provided by the device housing as a third electrical point; and

d) at least one diode residing between the second electrical point and the third electrical point, wherein the diode is actuatable in response to a bias applied across the second and third electrical points to thereby electrically short the first electrical point to the third electrical point at the energy dissipating surface.

77. The active implantable medical device of claim 76 wherein with the diode electrically connecting the terminal to the diversion circuit in response to the bias and at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a short from the terminal to the energy dissipating surface, and at relatively low frequencies attendant to the medical device being subjected to an MRI gradient field, the diversion circuit acts as an open circuit from the terminal to the energy dissipating surface.

78. The active implantable medical device of claim 77 wherein the diversion circuit comprises a resistor.

79. An active implantable medical device (AIMD), comprising:

a) a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical point;

b) a second electrical switch point that is electrically connectable to an electrode configured for tissue-stimulating or biological-sensing;

c) an energy dissipating surface provided by the device housing as a third electrical point;

d) at least one frequency variable impedance diversion circuit residing between the third electrical point and a fourth electrical switch point; and

e) a first diode that is actuatable in response to a bias to electrically connect the second electrical switch point to the fourth electrical switch point; and

f) a second diode that is actuatable in response to a bias to electrically disconnect the first electrical point from the second electrical switch point;

g) wherein with the first diode is biasable to electrically connect the second electrical switch point to the fourth electrical switch point at the diversion circuit and with the second diode being biasable to disconnect the second electrical switch point from the first electrical point, and;

i) at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a relatively low impedance circuit from the fourth electrical switch point to the third electrical point at the energy dissipating surface, and

ii) at relatively low frequencies attendant to the AIMD being subjected to an MRI gradient field, the diversion circuit acts as a relatively high impedance circuit from the fourth electrical switch point to the third electrical point at the energy dissipating surface.

80. The active implantable medical device of claim 79 further including an impeding circuit electrically connecting between a fifth electrical switch point at the second diode and the first electrical point at the tissue-stimulating or biological-sensing circuits.

81. The active implantable medical device of claim 80 wherein a transient voltage suppressor is in parallel with the diversion circuit.

82. The active implantable medical device of claim 80 wherein a transient voltage suppressor is in parallel with the impedance circuit.

83. An active implantable medical device (AIMD), comprising:

a) a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical point;

b) a second electrical point electrically connectable to an electrode configured for tissue-stimulating or biological-sensing;

c) a capacitor connected at one end to an intermediate location between the first and second electrical points;

d) an energy dissipating surface provided by the device housing as a third electrical point; and

e) at least one diode residing between the other end of the capacitor at a fourth electrical point and the third electrical point,

e) wherein with the diode electrically connecting fourth electrical point to the third electrical point and at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the capacitor acts as a relatively low impedance circuit between the first and second electrical points to the third electrical point so that relatively low frequency pacing pulses and biological sensing signals are diverted from the second electrical point to the third electrical point at the energy dissipating surface, and

f) wherein at relatively low frequencies attendant to the AIMD being subjected to an MRI gradient field, the capacitor acts as a relatively high impedance circuit from the first and second electrical points to the fourth electrical point so that relatively low frequency pacing pulses and biological sensing signals are allowed to pass from the second electrical point to the first electrical point.

84. An active implantable medical device (AIMD), comprising:

a) a conductive device housing for the AIMD, the housing containing tissue-stimulating or biological-sensing circuits connected to a first electrical point;

b) a second electrical switch point that is electrically connectable to an electrode configured for tissue-stimulating or biological-sensing;

c) an energy dissipating surface provided by the device housing as a third electrical point;

d) at least one frequency variable impedance diversion circuit residing between the third electrical point and a fourth electrical switch point; and

e) a first diode that is actuatable in response to a bias to electrically connect the second electrical switch point to the fourth electrical switch point; and

f) a second diode that is actuatable in response to a bias to electrically disconnect the first electrical point from the second electrical switch point;

g) wherein with the first diode is biasable to electrically connect the second electrical switch point to the fourth electrical switch point at the diversion circuit and with the second diode being biasable to disconnect the second electrical switch point from the first electrical point,

h) wherein with the first diode electrically connecting the terminal to the diversion circuit and with the second diode disconnecting the second electrical switch point from the first electrical point and;

i) at relatively high frequencies attendant to the AIMD being subjected to an MRI RF pulse field, the diversion circuit acts as a short from the terminal to the energy dissipating surface, and

ii) at relatively low frequencies attendant to the medical device being subjected to an MRI gradient field, the diversion circuit acts as an open circuit from the terminal to the energy dissipating surface.