Sub-threshold elastic deflection FET sensor for sensing pressure/force, a method and system thereof

• US 8,459,128 B2
• Filed: 06/19/2008
• Issued: 06/11/2013
• Est. Priority Date: 04/15/2008
• Status: Expired due to Fees

• Current Assignee: Indian Institute of Science
• Original Assignee: Indian Institute of Science
• Inventors: Bhat, Navakanta, Pratap, Rudra, Kaur, Malhi Charanjeet
• Primary Examiner(s): Noori, Max
• Application Number:
  US12/937,638
• Publication Number:
  US 20110023632A1
• Time in Patent Office: 1,818 Days
• Field of Search: 737/81, 737/77, 738/626.26, 737/60
• US Class Current: 73/862.626
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: G01L 1/005 by electrical means and not provided for in G01L1/06 - G01L1/22
• CPC Class Codes: G01L 1/148 using semiconductive material, e.g. silicon
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01L 9/0098 using semiconductor body comprising at least one PN junction as detecting element

Abstract

The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.

Claims

1. A Field Effect Transistor (FET) sensor for sensing pressure/force, said FET sensor comprising:

a. an elastic member forming a moving gate of the FET sensor,

b. a fixed dielectric on a substrate of the FET sensor, wherein said substrate comprises a thin film of a semiconducting material and a buried oxide layer of Silicon, and

c. a fluid dielectric formed between the elastic member and the fixed dielectric, wherein the FET sensor is operated in a sub threshold region for sensing the pressure/force on the elastic member, wherein the pressure/force alters a height of said fluid dielectric due to pressure/force on the elastic member thereby varying gate capacitance of the FET sensor for measuring the pressure/force.

2. The FET sensor as claimed in claim 1, wherein the fixed dielectric is silicon-dioxide.

3. The FET sensor as claimed in claim 1, wherein the fluid dielectric is air having a height more than that of the fixed dielectric.

4. The FET sensor as claimed in claim 1, wherein the elastic member'"'"'s profile is one of flat and corrugated.

5. The FET sensor as claimed in claim 1, wherein the elastic member is displaced by applied pressure/force altering the height of the fluid dielectric.

6. The FET sensor as claimed in claim 1, wherein the semi-conducting material is selected from a group consisting of Germanium (Ge), Silicon (Si), and Gallium arsenide (GaAs).

7. The FET sensor as claimed in claim 1, wherein the FET sensor is implemented with one of polysilicon gate and diffusion source-drain junctions, metal gates and schotky source drain junctions, or any combinations thereof.

8. The FET sensor as claimed in claim 1, wherein the FET sensor maintains a constant drain current to obtain uniform sensitivity over a wide range of operating conditions.

9. The FET sensor as claimed in claim 1, wherein the height of the fluid dielectric is optimized to a predetermined thickness of the fixed dielectric to improve capacitive coupling, thereby obtaining low threshold voltage.

10. The FET sensor as claimed in claim 1, wherein the FET sensor is operated in fully depleted SOI (Silicon-On-Insulator) mode and the sub-threshold slope of the FET sensor is enhanced due to the fully depleted SOI architecture, which further improves the overall sensitivity of the FET sensor.

11. The FET sensor as claimed in claim 10, wherein the fully depleted SOI mode is configured to provide predetermined sensitivity.

12. The FET sensor as claimed in claim 1, wherein the FET sensor has predetermined amplification factor which is obtained by biasing the FET sensor in the sub-threshold region to enable amplification of displacements of the order of nano/pico meters obtained due to the motion of the elastic member.

13. A method to sense pressure/force using the FET sensor as claimed in claim 1, said method comprising an act of observing a change in drain current of the FET sensor due to change in capacitive coupling of the FET sensor caused by deflection of the elastic member for sensing the pressure/force.

14. The method as claimed in claim 13, wherein the sensor is operated by applying a constant gate-to-source voltage, which is less than a threshold voltage of the FET sensor.

15. The method as claimed in claim 13, wherein the pressure/force deflects the elastic member resulting in a change in the height of the fluid dielectric.

16. The method as claimed in claim 13, wherein the elastic member deflections are generated in microphones, pressure sensors or any other elastic deflection measurements.

17. The method as claimed in claim 13, wherein the deflection of the elastic member changes the height of the fluid dielectric resulting in a change in gate capacitance.

18. The method as claimed in claim 13, wherein a change in the gate capacitance results in an exponential change in the drain current.

19. The method as claimed in claim 17, wherein the change in the gate capacitance results in an exponential change in the drain current.