Sub-threshold elastic deflection FET sensor for sensing pressure/force, a method and system thereof
First Claim
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1. A Field Effect Transistor (FET) sensor for sensing pressure/force, said FET sensor comprising:
- a. an elastic member forming a moving gate of the FET sensor,b. a fixed dielectric on a substrate of the FET sensor, wherein said substrate comprises a thin film of a semiconducting material and a buried oxide layer of Silicon, andc. a fluid dielectric formed between the elastic member and the fixed dielectric, wherein the FET sensor is operated in a sub threshold region for sensing the pressure/force on the elastic member, wherein the pressure/force alters a height of said fluid dielectric due to pressure/force on the elastic member thereby varying gate capacitance of the FET sensor for measuring the pressure/force.
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Abstract
The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.
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Citations
19 Claims
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1. A Field Effect Transistor (FET) sensor for sensing pressure/force, said FET sensor comprising:
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a. an elastic member forming a moving gate of the FET sensor, b. a fixed dielectric on a substrate of the FET sensor, wherein said substrate comprises a thin film of a semiconducting material and a buried oxide layer of Silicon, and c. a fluid dielectric formed between the elastic member and the fixed dielectric, wherein the FET sensor is operated in a sub threshold region for sensing the pressure/force on the elastic member, wherein the pressure/force alters a height of said fluid dielectric due to pressure/force on the elastic member thereby varying gate capacitance of the FET sensor for measuring the pressure/force. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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