Self-aligned wafer bonding

• US 8,460,794 B2
• Filed: 07/10/2009
• Issued: 06/11/2013
• Est. Priority Date: 07/10/2009
• Status: Active Grant

• Current Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Original Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Inventors: Zheng, Jun, Setiadi, Dadi
• Primary Examiner(s): ZACHARIA, RAMSEY E
• Application Number:
  US12/500,892
• Publication Number:
  US 20110008632A1
• Time in Patent Office: 1,432 Days
• Field of Search: None
• US Class Current: 428/411.1
• CPC Class Codes: B23K 31/02 relating to soldering or welding dip or wave soldering in the manufacture of printed circuits H05K3/34
• CPC Class Codes: B32B 7/03 with respect to the orientation of features direction of fibres or filaments B32B5/12
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/13022 the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16111 the bump connector being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/16147 the bump connector connecting to a bonding area disposed in a recess of the surface
• CPC Class Codes: H01L 2224/81001 involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/81002 being a removable or sacrificial coating
• CPC Class Codes: H01L 2224/81143 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
• CPC Class Codes: H01L 2224/81191 wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81203 Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81385 Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/81805 involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 23/29 : characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: Y10T 428/24562 : Interlaminar spaces
• CPC Class Codes: Y10T 428/24802 : Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
• CPC Class Codes: Y10T 428/24851 : Intermediate layer is discontinuous or differential
• CPC Class Codes: Y10T 428/24917 : including metal layer
• CPC Class Codes: Y10T 428/31504 : Composite [nonstructural laminate]
• CPC Class Codes: Y10T 428/31678 : Of metal

Abstract

A wafer article includes a substrate, two or more hydrophilic areas disposed on the substrate, hydrophobic areas surrounding the hydrophilic areas, and a eutectic bonding material disposed on the substrate. A wafer apparatus including two wafers having complimentary hydrophilic regions and eutectic bonding material is disclosed and a method of forming a bonded wafer articles is disclosed.

Claims

1. A wafer article comprising:

a substrate having a first major surface;

two or more hydrophilic areas disposed on the first major surface of the substrate;

hydrophobic areas surrounding the hydrophilic areas; and

a eutectic bonding material disposed on the first major surface of the substrate and bonding a parallel and opposing major surface of a second substrate, the eutectic bonding material located between the first major surface of the substrate and the parallel and opposing major surface of the second substrate and the parallel and opposing major surface of a second substrate includes a hydrophilic area in registration with at least one of the two or more hydrophilic areas disposed on the substrate.

2. A wafer article according to claim 1, wherein the second substrate comprises two or more hydrophilic areas disposed on the second substrate and in registration with the two or more hydrophilic areas disposed on the substrate.

3. A wafer article according to claim 2, wherein the hydrophilic areas on the substrate and the second substrate are registered to within 100 nm or less.

4. A wafer article according to claim 2, wherein the second substrate comprises hydrophobic areas surrounding the hydrophilic areas disposed on the second substrate.

5. A wafer article according to claim 1, wherein the second substrate comprises hydrophobic areas surrounding the hydrophilic areas disposed on the second substrate.

6. A wafer article according to claim 1, wherein the eutectic bonding material is a metal alloy eutectic bonding material.

7. A wafer article according to claim 1, wherein the parallel and opposing major surface of the second substrate includes two or more hydrophilic areas in registration with the two or more hydrophilic areas disposed on the substrate and the second substrate comprises hydrophobic areas surrounding the hydrophilic areas disposed on the second substrate.

8. A wafer article according to claim 1, wherein the substrate and second substrate include complementary hydrophilic areas.

9. A wafer article according to claim 1, wherein the substrate and second substrate include complementary hydrophilic areas and complementary hydrophobic areas.

10. A wafer article according to claim 1, wherein the substrate and second substrate comprise semiconductor material.

11. A wafer article according to claim 1, wherein the substrate and second substrate are formed from opaque material.

12. A wafer article according to claim 1, wherein the eutectic bonding material has a melting point in a range from 250 to 400 degrees centigrade.

13. A wafer article according to claim 1, wherein the eutectic bonding material defines a post or pillar element.